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MCR8DCMT4

更新时间： 2024-11-23 04:14:11
品牌 Logo 应用领域
安森美 - ONSEMI 可控硅整流器
页数 文件大小 规格书
5页 61K
描述
Silicon Controlled Rectifiers Reverse Blocking Thyristors

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中文翻译

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MCR8DCMT4 数据手册

 浏览型号MCR8DCMT4的Datasheet PDF文件第2页浏览型号MCR8DCMT4的Datasheet PDF文件第3页浏览型号MCR8DCMT4的Datasheet PDF文件第4页浏览型号MCR8DCMT4的Datasheet PDF文件第5页 
MCR8DCM, MCR8DCN  
Preferred Device  
Silicon Controlled Rectifiers  
Reverse Blocking Thyristors  
Designed for high volume, low cost, industrial and consumer  
applications such as motor control; process control; temperature, light  
and speed control.  
http://onsemi.com  
Features  
SCRs  
8 AMPERES RMS  
600 − 800 VOLTS  
• Small Size  
• Passivated Die for Reliability and Uniformity  
• Low Level Triggering and Holding Characteristics  
• Available in Surface Mount Lead Form − Case 369C  
• Epoxy Meets UL 94 V−0 @ 0.125 in  
G
A
K
• ESD Ratings:  
Human Body Model, 3B u 8000 V  
Machine Model, C u 400 V  
• Pb−Free Packages are Available  
4
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
2
1
3
Rating  
Symbol  
Value  
Unit  
Peak Repetitive Off−State Voltage  
V
V
DRM,  
(Note 1) (T = −40 to 125°C, Sine Wave,  
DPAK  
CASE 369C  
STYLE 4  
V
J
RRM  
50 to 60 Hz, Gate Open)  
MCR8DCM  
600  
800  
MCR8DCN  
On−State RMS Current  
(180° Conduction Angles; T = 105°C)  
I
8.0  
5.1  
80  
A
A
A
T(RMS)  
C
MARKING DIAGRAM  
Average On−State Current  
(180° Conduction Angles; T = 105°C)  
I
T(AV)  
C
YWW  
CR  
8DCxG  
Peak Non-Repetitive Surge Current  
I
TSM  
(1/2 Cycle, Sine Wave 60 Hz, T = 125°C)  
J
2
2
Circuit Fusing Consideration (t = 8.3 msec)  
I t  
26  
A sec  
Forward Peak Gate Power  
P
5.0  
W
W
A
GM  
(Pulse Width ≤ 1.0 ꢀ sec, T = 105°C)  
Y
= Year  
C
WW  
= Work Week  
Forward Average Gate Power  
P
0.5  
2.0  
G(AV)  
CR8DCx = Device Code  
x= M or N  
(t = 8.3 msec, T = 105°C)  
C
G
= Pb−Free Package  
Forward Peak Gate Current  
I
GM  
(Pulse Width ≤ 1.0 ꢀ sec, T = 105°C)  
C
Operating Junction Temperature Range  
Storage Temperature Range  
T
−40 to 125  
−40 to 150  
°C  
°C  
J
PIN ASSIGNMENT  
Cathode  
T
stg  
1
2
3
4
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
Anode  
Gate  
Anode  
1. V  
, V  
for all types can be applied on a continuous basis. Ratings apply  
DRM RRM  
for zero or negative gate voltage; positive gate voltage shall not be applied  
concurrent with negative potential on the anode. Blocking voltages shall not  
be tested with a constant current source such that the voltage ratings of the  
device are exceeded.  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 2 of this data sheet.  
Preferred devices are recommended choices for future use  
and best overall value.  
©
Semiconductor Components Industries, LLC, 2005  
1
Publication Order Number:  
November, 2005 − Rev. 4  
MCR8DCM/D  
 
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MCR8DCMT4 替代型号

型号 品牌 替代类型 描述 数据表
S6008DTP LITTELFUSE

功能相似

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TN815-600B-TR STMICROELECTRONICS

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