Datasheet > 触发装置 > 可控硅整流器> TN815-800B-TR

TN815-800B-TR

更新时间： 2024-11-03 22:29:15

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		可控硅
页数	文件大小	规格书
9页	164K
描述
8A SCRs

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中文翻译

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数据手册
替代型号

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TN815-800B-TR 数据手册

TN8, TS8 and TYNx08 Series

SENSITIVE & STANDARD

8A SCRs

MAIN FEATURES:

Symbol

Value

Unit

T(RMS)

600 to 1000

0.2 to 15

DRM RRM

DESCRIPTION

IPAK

(TS8-H)

(TN8-H)

DPAK

(TS8-B)

(TN8-B)

Available either in sensitive (TS8) or standard

(TN8 / TYN) gate triggering levels, the 8A SCR

series is suitable to fit all modes of control, found

in applications such as overvoltage crowbar

protection, motor control circuits in power tools

and kitchen aids, inrush current limiting circuits,

capacitive discharge ignition and voltage

regulation circuits...

Available in through-hole or surface-mount

packages, they provide an optimized performance

in a limited space area.

TO-220AB

(TYNx)

TO-220AB

(TS8-T)

ABSOLUTE RATINGS (limiting values)

Symbol

Parameter

Value

Unit

RMS on-state current (180° conduction angle)

T(RMS)

Tc = 110°C

Average on-state current (180° conduction angle)

(AV)

TS8/TN8 TYN

Non repetitive surge peak on-state

current

tp = 8.3 ms

tp = 10 ms

100

TSM

Tj = 25°C

tp = 10 ms

F = 60 Hz

tp = 20 µs

Tj = 25°C

24.5

A S

I t

I t Value for fusing

Critical rate of rise of on-state current

dI/dt

Tj = 125°C

A/µs

= 2 x I , tr ≤ 100 ns

Peak gate current

Tj = 125°C

Average gate power dissipation

G(AV)

Storage junction temperature range

Operating junction temperature range

- 40 to + 150

- 40 to + 125

stg

°C

Maximum peak reverse gate voltage (for TN8 & TYN only)

RGM

April 2002 - Ed: 4A

1/9

12 3 4 5 6 7...9

中文翻译

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TN815-800B-TR 替代型号

型号	品牌	替代类型	描述	数据表
TN815-600B-TR	STMICROELECTRONICS	完全替代	8A SCRs
TN815-600B	STMICROELECTRONICS	完全替代	SCR’s
TN815-800B	STMICROELECTRONICS	完全替代	SCR’s

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