MCR8DCN

更新时间： 2024-11-25 22:24:31

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		可控硅整流器
页数	文件大小	规格书
6页	105K
描述
Silicon Controlled Rectifiers

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MCR8DCN 数据手册

Order this document

by MCR8DCM/D

SEMICONDUCTOR TECHNICAL DATA

Motorola Preferred Devices

Reverse Blocking Thyristors

Designed for high volume, low cost, industrial and consumer applications

such as motor control; process control; temperature, light and speed control.

•

Small Size

SCRs

8.0 AMPERES RMS

600 thru 800 VOLTS

Passivated Die for Reliability and Uniformity

Low Level Triggering and Holding Characteristics

Available in Two Package Styles

Surface Mount Lead Form — Case 369A

Miniature Plastic Package — Straight Leads — Case 369

ORDERING INFORMATION

•

To Obtain “DPAK” in Surface Mount Leadform (Case 369A)

Shipped in Sleeves — No Suffix, i.e. MCR8DCN

Shipped in 16 mm Tape and Reel — Add “T4” Suffix to Device Number,

i.e. MCR8DCNT4

CASE 369A–13

STYLE 4

•

To Obtain “DPAK” in Straight Lead Version (Case 369) Shipped in Sleeves —

Add “–1” Suffix to Device Number, i.e. MCR8DCN–1

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Symbol

Value

Unit

(1)

Peak Repetitive Off–State Voltage

Peak Repetitive Reverse Voltage

(T = –40 to 125°C)

DRM

RRM

Volts

MCR8DCM

MCR8DCN

600

800

On–State RMS Current

(All Conduction Angles; T = 105°C)

T(RMS)

Amps

8.0

5.1

Average On–State Current (All Conduction Angles; T = 105°C)

T(AV)

Peak Non–Repetitive Surge Current

TSM

(One Half Cycle, 60 Hz, T = 125°C)

I t

Circuit Fusing Consideration (t = 8.3 msec)

A sec

Peak Gate Power

(Pulse Width ≤ 10 sec, T = 105°C)

Watts

5.0

Average Gate Power

G(AV)

(t = 8.3 msec, T = 105°C)

0.5

Peak Gate Current (Pulse Width ≤ 10 sec, T = 105°C)

2.0

Amps

Operating Junction Temperature Range

Storage Temperature Range

THERMAL CHARACTERISTICS

Characteristic

–40 to 125

–40 to 150

°C

stg

Symbol

Max

Unit

Thermal Resistance — Junction to Case

Thermal Resistance — Junction to Ambient

2.2

°C/W

(2)

Thermal Resistance — Junction to Ambient

Maximum Lead Temperature for Soldering Purposes

(1) V

(3)

260

°C

for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; positive gate voltage shall not be

DRM

applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the

voltage ratings of the device are exceeded.

(2) Surface mounted on minimum recommended pad size.

(3) 1/8″ from case for 10 seconds.

Preferred devices are Motorola recommended choices for future use and best overall value.

Motorola Thyristor Device Data

Motorola, Inc. 1997

12 3 4 5 6

中文翻译

下载PDF

与MCR8DCN相关器件

型号	品牌	获取价格	描述	数据表
MCR8DCN1	ONSEMI	获取价格	SILICON CONTROLLED RECTIFIER,800V V(DRM),8A I(T),TO-251
MCR8DCNT4	ONSEMI	获取价格	Silicon Controlled Rectifiers Reverse Blocking Thyristors
MCR8DCNT4G	ONSEMI	获取价格	Silicon Controlled Rectifiers Reverse Blocking Thyristors
MCR8DCNT4G	LITTELFUSE	获取价格	该硅控整流器专门用于高容量、低成本的工业和消费应用，例如电机控制、过程控制以及温度、光线和
MCR8DSM	ONSEMI	获取价格	Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors
MCR8DSM	MOTOROLA	获取价格	Silicon Controlled Rectifiers
MCR8DSM-1	MOTOROLA	获取价格	Silicon Controlled Rectifier, 8A I(T)RMS, 600V V(DRM), 600V V(RRM), 1 Element, MINIATURE,
MCR8DSMT4	ONSEMI	获取价格	Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors
MCR8DSMT4G	ONSEMI	获取价格	Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors
MCR8DSMT4G	LITTELFUSE	获取价格	该硅控整流器专门用于高容量、低成本的工业和消费应用，例如电机控制、过程控制以及温度、光线和

与MCR8DCN相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

45
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

34
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

62
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

59

产品中心

服务支持

精选活动

关于我们

帮助中心

MCR8DCN

MCR8DCN 数据手册

与MCR8DCN相关器件

与MCR8DCN相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

MCR8DCN

MCR8DCN 数据手册

与MCR8DCN相关器件

与MCR8DCN相关文章

您还可以找

您在本页遇到什么问题？