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MCR8DCNT4G

更新时间： 2024-11-23 04:16:19
品牌 Logo 应用领域
安森美 - ONSEMI 栅极触发装置可控硅整流器
页数 文件大小 规格书
5页 61K
描述
Silicon Controlled Rectifiers Reverse Blocking Thyristors

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中文翻译

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MCR8DCNT4G 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Transferred零件包装代码：TO-252
包装说明：SMALL OUTLINE, R-PSSO-G2针数：3
Reach Compliance Code：compliantHTS代码：8541.30.00.80
Factory Lead Time：1 week风险等级：5.16
Is Samacsys：N外壳连接：ANODE
配置：SINGLE关态电压最小值的临界上升速率：50 V/us
最大直流栅极触发电流：15 mA最大直流栅极触发电压：1 V
最大维持电流：30 mAJESD-30 代码：R-PSSO-G2
JESD-609代码：e3最大漏电流：0.01 mA
湿度敏感等级：1通态非重复峰值电流：80 A
元件数量：1端子数量：2
最大通态电流：8000 A最高工作温度：125 °C
最低工作温度：-40 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：260认证状态：Not Qualified
最大均方根通态电流：8 A断态重复峰值电压：800 V
重复峰值反向电压：800 V子类别：Silicon Controlled Rectifiers
表面贴装：YES端子面层：Tin (Sn)
端子形式：GULL WING端子位置：SINGLE
处于峰值回流温度下的最长时间：40触发设备类型：SCR
Base Number Matches：1

MCR8DCNT4G 数据手册

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MCR8DCM, MCR8DCN  
Preferred Device  
Silicon Controlled Rectifiers  
Reverse Blocking Thyristors  
Designed for high volume, low cost, industrial and consumer  
applications such as motor control; process control; temperature, light  
and speed control.  
http://onsemi.com  
Features  
SCRs  
8 AMPERES RMS  
600 − 800 VOLTS  
• Small Size  
• Passivated Die for Reliability and Uniformity  
• Low Level Triggering and Holding Characteristics  
• Available in Surface Mount Lead Form − Case 369C  
• Epoxy Meets UL 94 V−0 @ 0.125 in  
G
A
K
• ESD Ratings:  
Human Body Model, 3B u 8000 V  
Machine Model, C u 400 V  
• Pb−Free Packages are Available  
4
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
2
1
3
Rating  
Symbol  
Value  
Unit  
Peak Repetitive Off−State Voltage  
V
V
DRM,  
(Note 1) (T = −40 to 125°C, Sine Wave,  
DPAK  
CASE 369C  
STYLE 4  
V
J
RRM  
50 to 60 Hz, Gate Open)  
MCR8DCM  
600  
800  
MCR8DCN  
On−State RMS Current  
(180° Conduction Angles; T = 105°C)  
I
8.0  
5.1  
80  
A
A
A
T(RMS)  
C
MARKING DIAGRAM  
Average On−State Current  
(180° Conduction Angles; T = 105°C)  
I
T(AV)  
C
YWW  
CR  
8DCxG  
Peak Non-Repetitive Surge Current  
I
TSM  
(1/2 Cycle, Sine Wave 60 Hz, T = 125°C)  
J
2
2
Circuit Fusing Consideration (t = 8.3 msec)  
I t  
26  
A sec  
Forward Peak Gate Power  
P
5.0  
W
W
A
GM  
(Pulse Width ≤ 1.0 ꢀ sec, T = 105°C)  
Y
= Year  
C
WW  
= Work Week  
Forward Average Gate Power  
P
0.5  
2.0  
G(AV)  
CR8DCx = Device Code  
x= M or N  
(t = 8.3 msec, T = 105°C)  
C
G
= Pb−Free Package  
Forward Peak Gate Current  
I
GM  
(Pulse Width ≤ 1.0 ꢀ sec, T = 105°C)  
C
Operating Junction Temperature Range  
Storage Temperature Range  
T
−40 to 125  
−40 to 150  
°C  
°C  
J
PIN ASSIGNMENT  
Cathode  
T
stg  
1
2
3
4
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
Anode  
Gate  
Anode  
1. V  
, V  
for all types can be applied on a continuous basis. Ratings apply  
DRM RRM  
for zero or negative gate voltage; positive gate voltage shall not be applied  
concurrent with negative potential on the anode. Blocking voltages shall not  
be tested with a constant current source such that the voltage ratings of the  
device are exceeded.  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 2 of this data sheet.  
Preferred devices are recommended choices for future use  
and best overall value.  
©
Semiconductor Components Industries, LLC, 2005  
1
Publication Order Number:  
November, 2005 − Rev. 4  
MCR8DCM/D  
 
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