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MCR8DSNT4

更新时间： 2024-11-23 04:16:19
品牌 Logo 应用领域
安森美 - ONSEMI 栅
页数 文件大小 规格书
6页 68K
描述
Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors

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中文翻译

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MCR8DSNT4 技术参数

是否无铅： 含铅是否Rohs认证： 不符合
生命周期：Obsolete零件包装代码：TO-252
包装说明：PLASTIC, CASE 369C-01, DPAK-3针数：3
Reach Compliance Code：not_compliantHTS代码：8541.30.00.80
风险等级：5.29外壳连接：ANODE
配置：SINGLE关态电压最小值的临界上升速率：2 V/us
最大直流栅极触发电流：0.2 mA最大直流栅极触发电压：1 V
最大维持电流：6 mAJESD-30 代码：R-PSSO-G2
JESD-609代码：e0最大漏电流：0.01 mA
湿度敏感等级：1通态非重复峰值电流：90 A
元件数量：1端子数量：2
最大通态电流：8000 A最高工作温度：110 °C
最低工作温度：-40 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：240认证状态：Not Qualified
最大均方根通态电流：8 A断态重复峰值电压：800 V
重复峰值反向电压：800 V子类别：Silicon Controlled Rectifiers
表面贴装：YES端子面层：Tin/Lead (Sn/Pb)
端子形式：GULL WING端子位置：SINGLE
处于峰值回流温度下的最长时间：30触发设备类型：SCR

MCR8DSNT4 数据手册

 浏览型号MCR8DSNT4的Datasheet PDF文件第2页浏览型号MCR8DSNT4的Datasheet PDF文件第3页浏览型号MCR8DSNT4的Datasheet PDF文件第4页浏览型号MCR8DSNT4的Datasheet PDF文件第5页浏览型号MCR8DSNT4的Datasheet PDF文件第6页 
MCR8DSM, MCR8DSN  
Preferred Device  
Sensitive Gate  
Silicon Controlled Rectifiers  
Reverse Blocking Thyristors  
Designed for high volume, low cost, industrial and consumer  
applications such as motor control; process control; temperature, light  
and speed control.  
http://onsemi.com  
SCRs  
8 AMPERES RMS  
600 − 800 VOLTS  
Features  
• Small Size  
• Passivated Die for Reliability and Uniformity  
• Low Level Triggering and Holding Characteristics  
G
• Available in Two Package Styles  
A
K
Surface Mount Lead Form − Case 369C  
Miniature Plastic Package − Straight Leads − Case 369  
• Epoxy Meets UL 94 V−0 @ 0.125 in  
• ESD Ratings:  
Human Body Model, 3B u 8000 V  
Machine Model, C u 400 V  
MARKING  
DIAGRAM  
• Pb−Free Packages are Available  
4
YWW  
CR  
8DSxG  
DPAK  
CASE 369C  
STYLE 4  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Rating  
Symbol  
Value  
Unit  
1
Peak Repetitive Off−State Voltage (Note 1)  
V
V
V
DRM,  
RRM  
(T = −40 to 110°C, Sine Wave, 50 to 60 Hz,  
J
Gate Open)  
MCR8DSM  
MCR8DSN  
600  
800  
Y
WW  
=
=
Year  
Work Week  
On−State RMS Current  
(180° Conduction Angles; T = 90°C)  
I
8.0  
5.1  
90  
A
A
A
T(RMS)  
C
CR8DSx = Device Code  
x= M or N  
Average On−State Current  
(180° Conduction Angles; T = 90°C)  
I
T(AV)  
G
= Pb−Free Package  
C
Peak Non-Repetitive Surge Current  
I
TSM  
(1/2 Cycle, Sine Wave 60 Hz, T = 110°C)  
J
2
2
Circuit Fusing Consideration (t = 8.3 msec)  
I t  
34  
A sec  
PIN ASSIGNMENT  
Cathode  
Forward Peak Gate Power  
P
5.0  
W
W
A
GM  
(Pulse Width ≤ 1.0 ꢀ sec, T = 90°C)  
C
1
2
3
4
Forward Average Gate Power  
P
0.5  
2.0  
Anode  
G(AV)  
(t = 8.3 msec, T = 90°C)  
C
Gate  
Forward Peak Gate Current  
I
GM  
Anode  
(Pulse Width ≤ 1.0 ꢀ sec, T = 90°C)  
C
Operating Junction Temperature Range  
Storage Temperature Range  
T
−40 to 110  
−40 to 150  
°C  
°C  
J
T
stg  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 2 of this data sheet.  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
Preferred devices are recommended choices for future use  
and best overall value.  
1. V  
and V  
for all types can be applied on a continuous basis. Ratings  
DRM  
RRM  
apply for negative gate voltage; positive gate voltage shall not be applied  
concurrent with negative potential on the anode. Blocking voltages shall not  
be tested with a constant current source such that the voltage ratings of the  
device are exceeded.  
©
Semiconductor Components Industries, LLC, 2005  
1
Publication Order Number:  
November, 2005 − Rev. 4  
MCR8DSM/D  
 
123456

中文翻译

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与MCR8DSNT4相关器件

型号 品牌 获取价格 描述 数据表
MCR8DSNT4G ONSEMI

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 		Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors
MCR8DSNT4G LITTELFUSE

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 		该硅控整流器专门用于高容量、低成本的工业和消费应用，例如电机控制、过程控制以及温度、光线和
MCR8M ONSEMI

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 		8A, 600V, SCR, TO-220AB, CASE 221A-09, 3 PIN
MCR8M MOTOROLA

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 		Silicon Controlled Rectifier, 8A I(T)RMS, 8000mA I(T), 600V V(DRM), 600V V(RRM), 1 Element
MCR8M-AF MOTOROLA

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 		8A, 600V, SCR, TO-220AB
MCR8M-AJ MOTOROLA

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 		Silicon Controlled Rectifier, 8A I(T)RMS, 600V V(DRM), 600V V(RRM), 1 Element, TO-220AB
MCR8M-AK MOTOROLA

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 		Silicon Controlled Rectifier, 8A I(T)RMS, 600V V(DRM), 600V V(RRM), 1 Element, TO-220AB
MCR8M-AN MOTOROLA

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 		Silicon Controlled Rectifier, 8A I(T)RMS, 600V V(DRM), 600V V(RRM), 1 Element, TO-220AB
MCR8M-AS MOTOROLA

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 		8A, 600V, SCR, TO-220AB
MCR8M-AU MOTOROLA

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 		Silicon Controlled Rectifier, 8A I(T)RMS, 600V V(DRM), 600V V(RRM), 1 Element, TO-220AB

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