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MCR8N-BV

更新时间： 2024-11-26 12:57:59
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 可控硅
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2页 69K
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中文翻译

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MCR8N-BV 数据手册

 浏览型号MCR8N-BV的Datasheet PDF文件第2页 
Order this document  
by MCR8/D  
SEMICONDUCTOR TECHNICAL DATA  
*Motorola preferred devices  
SCRs  
8 AMPERES RMS  
400 thru 800  
VOLTS  
Designed primarily for half–wave ac control applications, such as motor  
controls, heating controls, and power supplies; or wherever half–wave, silicon  
gate–controlled devices are needed.  
•
•
•
•
•
Blocking Voltage to 800 Volts  
A
On-State Current Rating of 8 Amperes RMS  
High Surge Current Capability — 80 Amperes  
Industry Standard TO–220AB Package for Ease of Design  
Glass Passivated Junctions for Reliability and Uniformity  
K
A
G
CASE 221A–06  
(TO-220AB)  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Parameter  
Symbol  
Value  
Unit  
Peak Repetitive Off-State Voltage (1)  
Peak Repetitive Reverse Voltage  
V
DRM  
V
RRM  
Volts  
(T = –40 to 125°C)  
J
MCR8D  
MCR8M  
MCR8N  
400  
600  
800  
On-State RMS Current  
(All Conduction Angles)  
I
8
A
A
T(RMS)  
Peak Non-repetitive Surge Current  
(One Half Cycle, 60 Hz, T = 125°C)  
I
80  
TSM  
J
2
2
Circuit Fusing Consideration (t = 8.3 ms)  
I t  
26.5  
5.0  
A sec  
Peak Gate Power (Pulse Width ≤ 1.0 µs, T = 80°C)  
P
Watts  
Watts  
A
C
GM  
Average Gate Power (t = 8.3 ms, T = 80°C)  
P
0.5  
C
G(AV)  
Peak Gate Current (Pulse Width ≤ 1.0 µs, T = 80°C)  
I
2.0  
C
GM  
Operating Junction Temperature Range  
Storage Temperature Range  
T
–40 to +125  
–40 to +150  
°C  
J
T
stg  
°C  
THERMAL CHARACTERISTICS  
Thermal Resistance — Junction to Case  
Thermal Resistance — Junction to Ambient  
R
R
2.0  
62.5  
°C/W  
°C  
θJC  
θJA  
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds  
NOTE: V andV  
T
260  
L
foralltypescanbeappliedonacontinuousbasis.Ratingsapplyforzeroornegativegatevoltage;positivegatevoltageshall  
RRM  
DRM  
notbeappliedconcurrentwithnegativepotentialontheanode. Blockingvoltagesshallnotbetestedwithaconstantcurrentsourcesuchthat  
the voltage ratings of the devices are exceeded.  
This document contains information on a new product. Specifications and information herein are subject to change without notice.  
Preferred devices are Motorola recommended choices for future use and best overall value.  
REV 1  
Motorola, Inc. 1995  
12

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MCR8N-DW MOTOROLA

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 		Silicon Controlled Rectifier, 8A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element, TO-220AB
MCR8NG ONSEMI

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 		Silicon Controlled Rectifiers Reverse Blocking Thyristors
MCR8NG LITTELFUSE

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 		该硅控整流器主要用于半波交流控制应用，例如电机控制、加热控制与电源；或用于需要半波硅门控设
MCR8S ONSEMI

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 		Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors
MCR8S MOTOROLA

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 		Silicon Controlled Rectifiers
MCR8SD ONSEMI

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 		Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors
MCR8SD MOTOROLA

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 		8A, 400V, SCR, TO-220AB, CASE 221A, 3 PIN
MCR8SD-AF MOTOROLA

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 		Silicon Controlled Rectifier, 8A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element, TO-220AB
MCR8SD-AK MOTOROLA

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 		Silicon Controlled Rectifier, 8A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element, TO-220AB
MCR8SD-AN MOTOROLA

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 		8A, 400V, SCR, TO-220AB

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