Datasheet > MCR8DSNT4G

MCR8DSNT4G

更新时间： 2024-11-26 04:16:19

品牌	Logo	应用领域
安森美 - ONSEMI		栅
页数	文件大小	规格书
6页	68K
描述
Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors

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中文翻译

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替代型号

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MCR8DSNT4G 数据手册

MCR8DSM, MCR8DSN

Preferred Device

Sensitive Gate

Silicon Controlled Rectifiers

Reverse Blocking Thyristors

Designed for high volume, low cost, industrial and consumer

applications such as motor control; process control; temperature, light

and speed control.

http://onsemi.com

SCRs

8 AMPERES RMS

600 − 800 VOLTS

Features

• Small Size

• Passivated Die for Reliability and Uniformity

• Low Level Triggering and Holding Characteristics

• Available in Two Package Styles

Surface Mount Lead Form − Case 369C

Miniature Plastic Package − Straight Leads − Case 369

• Epoxy Meets UL 94 V−0 @ 0.125 in

• ESD Ratings:

Human Body Model, 3B u 8000 V

Machine Model, C u 400 V

MARKING

DIAGRAM

• Pb−Free Packages are Available

YWW

8DSxG

DPAK

CASE 369C

STYLE 4

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Symbol

Value

Unit

Peak Repetitive Off−State Voltage (Note 1)

DRM,

RRM

(T = −40 to 110°C, Sine Wave, 50 to 60 Hz,

Gate Open)

MCR8DSM

MCR8DSN

600

800

Year

Work Week

On−State RMS Current

(180° Conduction Angles; T = 90°C)

8.0

5.1

T(RMS)

CR8DSx = Device Code

x= M or N

Average On−State Current

(180° Conduction Angles; T = 90°C)

T(AV)

= Pb−Free Package

Peak Non-Repetitive Surge Current

TSM

(1/2 Cycle, Sine Wave 60 Hz, T = 110°C)

Circuit Fusing Consideration (t = 8.3 msec)

I t

A sec

PIN ASSIGNMENT

Cathode

Forward Peak Gate Power

5.0

(Pulse Width ≤ 1.0 ꢀ sec, T = 90°C)

Forward Average Gate Power

0.5

2.0

Anode

G(AV)

(t = 8.3 msec, T = 90°C)

Gate

Forward Peak Gate Current

Anode

(Pulse Width ≤ 1.0 ꢀ sec, T = 90°C)

Operating Junction Temperature Range

Storage Temperature Range

−40 to 110

−40 to 150

°C

stg

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

Preferred devices are recommended choices for future use

and best overall value.

1. V

and V

for all types can be applied on a continuous basis. Ratings

DRM

RRM

apply for negative gate voltage; positive gate voltage shall not be applied

concurrent with negative potential on the anode. Blocking voltages shall not

be tested with a constant current source such that the voltage ratings of the

device are exceeded.

Semiconductor Components Industries, LLC, 2005

Publication Order Number:

November, 2005 − Rev. 4

MCR8DSM/D

12 3 4 5 6

中文翻译

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MCR8DSNT4G 替代型号

型号	品牌	替代类型	描述	数据表
TN815-800B-TR	STMICROELECTRONICS	功能相似	8A SCRs

与MCR8DSNT4G相关器件

型号	品牌	获取价格	描述	数据表
MCR8M	ONSEMI	获取价格	8A, 600V, SCR, TO-220AB, CASE 221A-09, 3 PIN
MCR8M	MOTOROLA	获取价格	Silicon Controlled Rectifier, 8A I(T)RMS, 8000mA I(T), 600V V(DRM), 600V V(RRM), 1 Element
MCR8M-AF	MOTOROLA	获取价格	8A, 600V, SCR, TO-220AB
MCR8M-AJ	MOTOROLA	获取价格	Silicon Controlled Rectifier, 8A I(T)RMS, 600V V(DRM), 600V V(RRM), 1 Element, TO-220AB
MCR8M-AK	MOTOROLA	获取价格	Silicon Controlled Rectifier, 8A I(T)RMS, 600V V(DRM), 600V V(RRM), 1 Element, TO-220AB
MCR8M-AN	MOTOROLA	获取价格	Silicon Controlled Rectifier, 8A I(T)RMS, 600V V(DRM), 600V V(RRM), 1 Element, TO-220AB
MCR8M-AS	MOTOROLA	获取价格	8A, 600V, SCR, TO-220AB
MCR8M-AU	MOTOROLA	获取价格	Silicon Controlled Rectifier, 8A I(T)RMS, 600V V(DRM), 600V V(RRM), 1 Element, TO-220AB
MCR8M-BA	MOTOROLA	获取价格	Silicon Controlled Rectifier, 8A I(T)RMS, 600V V(DRM), 600V V(RRM), 1 Element, TO-220AB
MCR8M-BC	MOTOROLA	获取价格	暂无描述

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