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MCR8DSMT4

更新时间： 2024-11-23 04:16:19
品牌 Logo 应用领域
安森美 - ONSEMI 栅极
页数 文件大小 规格书
6页 68K
描述
Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors

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中文翻译

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MCR8DSMT4 数据手册

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MCR8DSM, MCR8DSN  
Preferred Device  
Sensitive Gate  
Silicon Controlled Rectifiers  
Reverse Blocking Thyristors  
Designed for high volume, low cost, industrial and consumer  
applications such as motor control; process control; temperature, light  
and speed control.  
http://onsemi.com  
SCRs  
8 AMPERES RMS  
600 − 800 VOLTS  
Features  
• Small Size  
• Passivated Die for Reliability and Uniformity  
• Low Level Triggering and Holding Characteristics  
G
• Available in Two Package Styles  
A
K
Surface Mount Lead Form − Case 369C  
Miniature Plastic Package − Straight Leads − Case 369  
• Epoxy Meets UL 94 V−0 @ 0.125 in  
• ESD Ratings:  
Human Body Model, 3B u 8000 V  
Machine Model, C u 400 V  
MARKING  
DIAGRAM  
• Pb−Free Packages are Available  
4
YWW  
CR  
8DSxG  
DPAK  
CASE 369C  
STYLE 4  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Rating  
Symbol  
Value  
Unit  
1
Peak Repetitive Off−State Voltage (Note 1)  
V
V
V
DRM,  
RRM  
(T = −40 to 110°C, Sine Wave, 50 to 60 Hz,  
J
Gate Open)  
MCR8DSM  
MCR8DSN  
600  
800  
Y
WW  
=
=
Year  
Work Week  
On−State RMS Current  
(180° Conduction Angles; T = 90°C)  
I
8.0  
5.1  
90  
A
A
A
T(RMS)  
C
CR8DSx = Device Code  
x= M or N  
Average On−State Current  
(180° Conduction Angles; T = 90°C)  
I
T(AV)  
G
= Pb−Free Package  
C
Peak Non-Repetitive Surge Current  
I
TSM  
(1/2 Cycle, Sine Wave 60 Hz, T = 110°C)  
J
2
2
Circuit Fusing Consideration (t = 8.3 msec)  
I t  
34  
A sec  
PIN ASSIGNMENT  
Cathode  
Forward Peak Gate Power  
P
5.0  
W
W
A
GM  
(Pulse Width ≤ 1.0 ꢀ sec, T = 90°C)  
C
1
2
3
4
Forward Average Gate Power  
P
0.5  
2.0  
Anode  
G(AV)  
(t = 8.3 msec, T = 90°C)  
C
Gate  
Forward Peak Gate Current  
I
GM  
Anode  
(Pulse Width ≤ 1.0 ꢀ sec, T = 90°C)  
C
Operating Junction Temperature Range  
Storage Temperature Range  
T
−40 to 110  
−40 to 150  
°C  
°C  
J
T
stg  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 2 of this data sheet.  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
Preferred devices are recommended choices for future use  
and best overall value.  
1. V  
and V  
for all types can be applied on a continuous basis. Ratings  
DRM  
RRM  
apply for negative gate voltage; positive gate voltage shall not be applied  
concurrent with negative potential on the anode. Blocking voltages shall not  
be tested with a constant current source such that the voltage ratings of the  
device are exceeded.  
©
Semiconductor Components Industries, LLC, 2005  
1
Publication Order Number:  
November, 2005 − Rev. 4  
MCR8DSM/D  
 
123456

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MCR8DSMT4 替代型号

型号 品牌 替代类型 描述 数据表
S6008DS2RP LITTELFUSE

功能相似

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