Datasheet > MCR100-8

MCR100-8

更新时间： 2024-11-21 14:54:31

品牌	Logo	应用领域
鲁光 - LGE		可控硅
页数	文件大小	规格书
3页	584K
描述
单向可控硅

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中文翻译

获取价格

技术参数
数据手册

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MCR100-8 技术参数

Repetitive peak off-state voltages：	600	@IDRM(uA)：	10
On-State Current：	0.8	Gate trigger current：	200
Gate trigger voltage：	0.8	@VAK(V)：	7
TJ(℃）：	-55-150	Package：	SOT-89-3L

MCR100-8 数据手册

ꢕꢔꢖꢗꢘꢘꢙꢚꢙꢟꢣ

ꢅꢟꢠꢙꢡꢢ

Tape

ꢕꢔꢖꢗꢘꢘꢙꢚ

Bulk

MCR100- 6,- 8

TO-92

MCR100- 6,- 8 ^{Silicon Controlled Rectifier}

MAIN FEATURES

Symbol

I_T(RMS)

value

0.8

unit

1.KATHODE

2.GATE

MCR100-6

400

V_DRM/V^RRM

MCR100-8

600

3.ANODE

Junction Temperature

-40 ~ 125

T_stg

Storage Temperature

-55 ~ 150

DESCRIPTION

Logic level sensitive gate triac intended to be interfaced directly to microcontrollers, logic integrated circuits

and other low power gate trigger circuits.

APPLICATIONS

FEATURES

ꢀ

General purpose switching

ꢀ

Blocking voltage to 400 V (MCR100-6)

RMS on-state current to 0.8 A

General purpose switching

ꢀ

Phase control applications

ꢀ

Solid state relays

ꢀꢁꢂꢃꢄꢅꢆ

Equivalent Circuit

ꢕꢔꢖꢗꢘꢘꢙꢚꢇꢛꢊꢑꢃꢎꢊꢅꢎꢁꢄꢊꢅ

MCR100-6

ꢀ

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ҟҟҟ

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ꢓꢓꢓꢇꢔꢁꢄꢊ

ꢀ

K G A

ꢇꢂꢈꢉꢂꢄꢅꢆꢊꢄꢅꢋꢇꢂꢀ۷ꢌꢄꢇꢅꢅ

ꢍꢎꢏꢐꢊꢅꢑꢒꢓꢔꢏɍ

ꢍꢎꢕꢖꢎꢗꢔꢊ

TO-92

ꢍꢎꢕꢖꢘꢙꢗꢊꢀꢔꢐꢚꢛꢜꢊ

ꢍꢎꢕꢖꢊ!ꢑꢎꢙꢐꢘꢐ"ꢊ

1000pcs/Bag

2000pcs/ꢅBꢅ ox

http://www.lgesemi.com

mail:lge@lgesemi.com

Revision:20170301-P1

12 3

中文翻译

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