Datasheet > MCR100-8H

MCR100-8H

更新时间： 2024-11-24 07:20:19

品牌	Logo	应用领域
稳先微 - WINSEMI		可控硅整流器
页数	文件大小	规格书
5页	267K
描述
Silicon Controlled Rectifiers

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MCR100-8H 数据手册

MCR100-8H

Sensitive Gate

Silicon Controlled Rectifiers

Features

■ High repetitive peak off-state voltage V_DRM/V_RRM=800V

■ Sensitive gate trigger current: I_GT=200uA max.

■ Low on-state voltage: V_TM=1.4(typ.)@ I_TM

■ Low reverse and forward blocking current:

I_DRM/I_PRM=100uA@TC=125℃

■ Low holding current: I_H=5mA maximum

General Description

Sensitive triggering SCR is suitable for the application

where gate current limited such as microcontrollers, logic

integrated circuits, small motor control, gate driver for large

SCR, sensing and detecting circuits.

General purpose switching and phase control applications

TO-92

Absolute Maximum Ratings (Tj=25℃ unless otherwise specified)

Symbol

Parameter

Value

Units

V_DRM/V_RRM

I_T(RMS)

Repetitive peak off-state voltage

Note(1)

TI=85℃

800

RMS on-state current (180^oconduction angles)

Average on-state current (80^oconduction angles )

0.8

I_T(AV)

TI=85℃

0.5

tp = 8.3 ms

tp = 10 ms

tp = 8.3 ms

I_TSM

Non repetitive surge peak on-state current

I²t

I²t Value for fusing

0.43

0.1

A²s

P_GM

P_G(AV)

I_FGM

V_RGM

T_J,

Peak gate power

Average gate power dissipation

Peak gate current

T_J=25℃

T_A=25℃

0.01

Peak gate voltage

Junction temperature

Storage temperature

-40~125

-40~150

℃

T_stg

Note1: Although not recommended, off-state voltages up to 900 V may be applied without damage, but the thyristor may

switch to the on-state.The rate of rise of current should not exceed 15 A/µs.

Thermal Characteristics

Value

Typ

Symbol

Parameter

Units

Min

Max

R_QJC

R_QJA

Thermal resistance, Junction-to-Case

Thermal resistance, Junction-to-Ambient

℃

200

℃/W

Rev. A1.1 Jun.2011

T12-2

12 3 4 5

中文翻译

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