Datasheet > MCR100-8-A1

MCR100-8-A1

更新时间： 2022-02-26 09:38:46

品牌	Logo	应用领域
TSC		/
页数	文件大小	规格书
3页	210K
描述
Thyristors

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数据手册

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MCR100-8-A1 数据手册

MCR100-3/MCR100-4/MCR100-5/MCR100-6/MCR100-7/MCR100-8

Thyristors

Small Signal Diode

DO-92

Features

Epitaxial planar die construction

Surface device type mounting

Moisture sensitivity level 1

Matte Tin(Sn) lead finish with Nickel(Ni) underplate

Pb free version and RoHS compliant

Green compound (Halogen free) with suffix "G" on

packing code and prefix "G" on date code

Mechanical Data

Case : TO-92 plastic package

Terminal: Matte tin plated, lead free., solderable

per MIL-STD-202, Method 208 guaranteed

Weight : 0.19gram (approximately)

High temperature soldering guaranteed: 260°C/10s

Unit (mm)

Unit (inch)

Ordering Information

Dimensions

Min Max Min

4.50 4.70 0.177

Max

0.185

Part No.

Package

TO-92

Packing

4k/ box

MCR100-3 A1/A1G

MCR100-4 A1/A1G

MCR100-5 A1/A1G

MCR100-6 A1/A1G

MCR100-7 A1/A1G

MCR100-8 A1/A1G

TO-92

4k/ box

12.50

0.492

0.35 0.45 0.013

3.50 3.70 0.137

1.00 1.20 0.039

0.29 0.39 0.011

0.017

0.145

0.047

0.015

Maximum Ratings and Electrical Characteristics

Rating at 25°C ambient temperature unless otherwise specified.

Maximum Ratings

Type Number

Symbol

Value

Units

I_T(RMS)

0.8

Forward Current RMS(All Conduction Angles）

MCR100-3

100

200

300

400

500

600

MCR100-4

MCR100-5

MCR100-6

MCR100-7

MCR100-8

Peak Repetitive Forward and Reverse

Blocking Voltage（T_J=25℃TO 125℃，

R_GK=1KΩ）

V_DRMand V_RRM

Peak Forward Surge Current，T_A=25℃

I_TSM

(1/2 Cycle，Sine Wave，60Hz）

I²t

P_GM

A²s

0.415

0.1

0.01

Circuit Fusing Considerations（t= 8.3 ms）

Forward Peak Gate Power （T_A=25℃，PW≤1 us）

Forward Average Gate Power（T_A=25℃)

Forward Peak Gate Current（T_A=25℃，PW≤1 us）

Reverse Peak Gate Current（T_A=25℃，PW≤1 us）

P_GF(AV)

I_GFM

V_GRM

Notes:1. Valid provided that electrodes are kept at ambient temperature

Version:B12

12 3

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