Datasheet > MCR100-8R

MCR100-8R

更新时间： 2024-11-21 18:08:59

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2页	380K
描述
Silicon Controlled Rectifiers

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中文翻译

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数据手册

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MCR100-8R 数据手册

Thyristor

SMD Type

Silicon Controlled Rectifiers

MCR100-8

Unit:mm

SOT-89

■ Features

1.50 ±0.1

4.50±0.1

● Blocking voltage to 400 V

● RMS on-state current to 0.8 A

● General purpose switching

1.80±0.1

0.44±0.1

0.48±0.1

0.53±0.1

3.00±0.1

1.Cathode

2.Anode

3.Gate

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Symbol

Rating

600

Unit

VDRM

and

VRRM

Peak Repetitive Forward and Reverse Blocking Voltage

(TJ = 25 to 125℃, RGK = 1 K Ω)

Forward Current RMS

IT(RMS)

ITSM

0.8

Peak Forward Surge Current, TA = 25℃

(1/2 Cycle, Sine Wave, 60 Hz)

I²t

PGM

A²s

Circuit Fusing Considerations (t = 8.3 ms)

0.415

0.1

Peak Gate Power ─ Forward, TA = 25℃

PGF(AV)

IGFM

VGRM

RθJA

RθJC

0.01

Average Gate Power ─ Forward, TA = 25℃

Peak Gate Current ─ Forward, TA = 25℃ (300 ms, 120 PPS)

Peak Gate Voltage ─ Reverse

200

℃/W

℃

Thermal Resistance, Junction to Ambient

Thermal Resistance, Junction to Case

Operating Junction Temperature Range @ Rated VRRM and VDRM

-40 to +125

-40 to +150

230

Tstg

℃

Storage Temperature Range

℃

Lead Solder Temperature(＜1/16"from case, 10 s max)

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