Datasheet > MCR100-8Q

MCR100-8Q

更新时间： 2024-11-21 14:54:43

品牌	Logo	应用领域
先科 - SWST		可控硅
页数	文件大小	规格书
3页	180K
描述
可控硅

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MCR100-8Q 数据手册

MCR100-8Q

Silicon Controlled Rectifiers

Reverse Blocking Triode Thyristors

1. Cathode 2，4. Anode 3. Gate

SOT-223 Plastic Package

Absolute Maximum Ratings (T_J= 25 C unless otherwise noted)

Parameter

Symbol

V_DRMand V_RRM

I_T(RMS)

Value

Unit

Peak Repetitive Forward and Reverse Blocking

Voltage ¹⁾(T_J= 25 to 125 C, R_GK= 1 KΩ)

600

0.8

Forward Current RMS (All Conduction Angles)

Peak Forward Surge Current, T_A= 25 C

(1/2 Cycle, Sine Wave, 60 Hz)

I_TSM

Circuit Fusing Considerations (t = 8.3 ms)

I²t

P_GM

0.415

0.1

0.01

A²s

Forward Peak Gate Power (T_A= 25 C, PW ≤ 1 µs)

Forward Average Gate Power (T_A= 25 C)

P_GF(AV)

I_GFM

Forward Peak Gate Current (T_A= 25 C, PW ≤ 1 µs)

V_GRM

Reverse Peak Gate Voltage (T_A= 25 C PW ≤ 1 µs)

Operating Junction Temperature Range

at Rated V_RRMand V_DRM

T_j

- 40 to + 125

- 40 to + 150

C

Storage Temperature Range

T_stg

DRM

and V_RRMfor types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage;

however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages

shall not be tested with a constant current source such that the voltage ratings of the device are exceeded.

Characteristics at T_a= 25 C, R_GK= 1 KΩ unless otherwise noted.

Parameter

Symbol

Min.

Max.

Unit

µA

Peak Forward or Reverse Blocking Current

at V_AK= Rated V_DRMor V_RRM

_DRM, I_RRM

Peak Forward On-State Voltage

at I_TM= 1 A Peak, T_A= 25 C

Gate Trigger Current (Continuous dc) ¹⁾

V_TM

I_GT

1.7

200

µA

at Anode Voltage = 7 Vdc, R_L=100 Ω)

Gate Trigger Voltage (Continuous dc)

at Anode Voltage = 7 Vdc, R_L= 100 Ω)

at Anode Voltage = Rated V_DRM, R_L= 100 Ω)

V_GT

0.8

Holding Current

I_H

at Anode Voltage = 7 Vdc, initiating current = 20 mA)

current is not included in measurement.

Dated：28/11/2018 Rev：01

12 3

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