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MCR100-8U PDF预览

MCR100-8U

更新时间： 2024-01-21 14:24:20
品牌 Logo 应用领域
商升特 - SEMTECH 栅
页数 文件大小 规格书
3页 250K
描述
Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors

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中文翻译

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MCR100-8U 技术参数

是否无铅： 含铅生命周期：Active
零件包装代码：TO-92包装说明：LEAD FREE, PLASTIC, CASE 29-11, TO-226AA, 3 PIN
针数：3Reach Compliance Code：unknown
风险等级：5.55配置：SINGLE
最大直流栅极触发电流：0.2 mAJEDEC-95代码：TO-92
JESD-30 代码：O-PBCY-T3JESD-609代码：e1
湿度敏感等级：NOT SPECIFIED元件数量：1
端子数量：3封装主体材料：PLASTIC/EPOXY
封装形状：ROUND封装形式：CYLINDRICAL
峰值回流温度（摄氏度）：260认证状态：COMMERCIAL
最大均方根通态电流：0.8 A断态重复峰值电压：600 V
重复峰值反向电压：600 V表面贴装：NO
端子面层：TIN SILVER COPPER端子形式：THROUGH-HOLE
端子位置：BOTTOM处于峰值回流温度下的最长时间：40
触发设备类型：SCRBase Number Matches：1

MCR100-8U 数据手册

 浏览型号MCR100-8U的Datasheet PDF文件第2页浏览型号MCR100-8U的Datasheet PDF文件第3页 
MCR100…U Series  
Sensitive Gate Silicon Controlled Rectifiers  
Reverse Blocking Thyristors  
O
Absolute Maximum Ratings (Ta = 25 C)  
Parameter  
Peak Repetitive Off-State Voltage 4)  
Symbol  
Value  
Unit  
V
O
O
(TJ = -40 C to 110 C, Sine Wave, 50 to 60 Hz, Gate Open)  
200  
400  
600  
V
DRM, VRRM  
MCR100-4U  
MCR100-6U  
MCR100-8U  
On-State RMS Current  
(TC = 80 C) 180 Conduction Angles  
Peak Non-Repetitive Surge Current  
IT(RMS)  
ITSM  
0.8  
10  
A
A
O
O
O
(1/2 Cycle, Sine Wave, 60 Hz, TJ = 25 C)  
Circuit Fusing Considerations (t = 8.3 ms)  
I2t  
PGM  
PG(AV)  
IGM  
0.415  
A2s  
W
W
A
Forward Peak Gate Power (Pulse Width ≤ 1 μs)  
Forward Average Gate Power (t = 8.3 ms)  
Peak Gate Current – Forward (Pulse Width ≤ 1 μs)  
Peak Gate Voltage – Reverse (Pulse Width ≤ 1 μs)  
Operating Junction Temperature Range  
Storage Temperature Range  
0.1  
0.1  
1
VGRM  
TJ  
5
V
O
C
- 40 to + 110  
- 40 to + 150  
O
C
TS  
O
Characteristics at Ta = 25 C  
Parameter  
Symbol  
Max.  
10  
Unit  
Peak Forward or Reverse Blocking Current 2)  
at VD = Rated VDRM and VRRM, RGK = 1 KΩ  
Peak Forward On-State Voltage 1)  
at ITM = 1 A Peak  
IDRM, IRRM  
VTM  
μA  
1.7  
V
Gate Trigger Current 3)  
IGT  
200  
μA  
at VAK = 7 V, RL = 100 Ω  
Holding Current 2)  
O
at VAK = 7 V, Initiating Current = 20 mA  
TC = 25 C  
IH  
5
10  
mA  
mA  
V
O
TC = - 40 C  
Latch Current  
O
at VAK = 7 V, Ig = 200 μA  
TC = 25 C  
IL  
10  
15  
O
TC = - 40 C  
Gate Trigger Voltage 3)  
O
at VAK = 7 V, RL = 100 Ω  
TC = 25 C  
VGT  
0.8  
1.2  
O
TC = - 40 C  
1) Indicates pulse teat width ≤ 1 ms, duty cycle ≤ 1%  
2)  
R
GK  
= 1 KΩ included in measurement  
3) Does not include RGK in measurement  
4)  
V
DRM  
and VRRM for all types can be applied on continous basis. Ratings apply for zero negative gate voltage; however,  
positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be  
tested with a constant current sourse such that the voltage ratings of the devices are exceeded.  
SEMTECH ELECTRONICS LTD.  
(Subsidiary of Sino-Tech International Holdings Limited, a company  
listed on the Hong Kong Stock Exchange, Stock Code: 724)  
®
Dated : 19/03/2007  
123

中文翻译

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