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MCR100-8-T PDF预览

MCR100-8-T

更新时间: 2024-02-28 11:43:54
品牌 Logo 应用领域
稳先微 - WINSEMI 可控硅整流器
页数 文件大小 规格书
6页 399K
描述
Silicon Controlled Rectifiers

MCR100-8-T 技术参数

是否无铅: 含铅生命周期:Active
零件包装代码:TO-92包装说明:LEAD FREE, PLASTIC, CASE 29-11, TO-226AA, 3 PIN
针数:3Reach Compliance Code:unknown
风险等级:5.55配置:SINGLE
最大直流栅极触发电流:0.2 mAJEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-T3JESD-609代码:e1
湿度敏感等级:NOT SPECIFIED元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):260认证状态:COMMERCIAL
最大均方根通态电流:0.8 A断态重复峰值电压:600 V
重复峰值反向电压:600 V表面贴装:NO
端子面层:TIN SILVER COPPER端子形式:THROUGH-HOLE
端子位置:BOTTOM处于峰值回流温度下的最长时间:40
触发设备类型:SCRBase Number Matches:1

MCR100-8-T 数据手册

 浏览型号MCR100-8-T的Datasheet PDF文件第2页浏览型号MCR100-8-T的Datasheet PDF文件第3页浏览型号MCR100-8-T的Datasheet PDF文件第4页浏览型号MCR100-8-T的Datasheet PDF文件第5页浏览型号MCR100-8-T的Datasheet PDF文件第6页 
MCR100-8  
Sensitive Gate  
Silicon Controlled Rectifiers  
Features  
■ Sensitive gate trigger current: IGT=200uA maximum  
■ Low on-state voltage: VTM=1.2(typ.)@ ITM  
■ Low reverse and forward blocking current:  
IDRM/IPRM=100uA@TC=125  
■ Low holding current: IH=5mA maximum  
General Description  
Sensitive triggering SCR is suitable for the application where  
gate current limited such as microcontrollers, logic integrated  
circuits, small motor control, gate driver for large SCR, sensing  
and detecting circuits.  
General purpose switching and phase control applications  
Absolute Maximum Ratings (Tj=25unless otherwise specified)  
Symbol  
VDRM/VRRM  
IT(RMS)  
Parameter  
Value  
600  
0.8  
0.5  
9
Units  
Repetitive peak off-state voltage  
Note(1)  
TI=85℃  
V
A
A
RMS on-state current (180o conduction angles)  
Average on-state current (80o conduction angles )  
IT(AV)  
TI=85℃  
tp = 8.3 ms  
tp = 10 ms  
tp = 8.3 ms  
ITSM  
Non repetitive surge peak on-state current  
A
8
I2t  
I²t Value for fusing  
Peak gate power  
0.41  
0.1  
A2s  
W
PGM  
Critical rate of rise of on-state current  
ITM = 2A; IG = 10mA; dIG/dt = 100mA/µs  
dI/dt  
TJ=125℃  
50  
A/μs  
PG(AV)  
IFGM  
VRGM  
TJ,  
Average gate power dissipation  
Peak gate current  
TA=25℃  
TA=25℃  
TA=25℃  
0.01  
1
W
A
Peak gate voltage  
5
V
Junction temperature  
Storage temperature  
-40~125  
-40~150  
Tstg  
Note1: Although not recommended, off-state voltages up to 800 V may be applied without damage, but the thyristor may  
switch to the on-state.The rate of rise of current should not exceed 15 A/µs.  
Thermal Characteristics  
Value  
Typ  
Symbol  
Parameter  
Units  
Min  
-
Max  
75  
RQJC  
RQJA  
Thermal resistance, Junction-to-Case  
Thermal resistance, Junction-to-Ambient  
-
/W  
/W  
-
-
200  
Ordering Information  
Order codes  
Package  
Marking  
Halogen Free  
Packaging  
MCR100-8  
TO126  
TO126  
100-8  
100-8  
NO  
NO  
Tube  
Reel  
MCR100-8-T  
Rev. B2 Jun.2009  
T21-2  
Copyright @ WinSemi Microeletronics Co., Ltd., All rights reserved.  

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