Datasheet > MCR100-8C

MCR100-8C

更新时间： 2023-01-02 22:59:59

品牌	Logo	应用领域
友顺 - UTC		/
页数	文件大小	规格书
4页	65K
描述
Silicon Controlled Rectifier

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中文翻译

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数据手册

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MCR100-8C 数据手册

UTC MCR100

SCR

SENSITIVE GATE SILICON

CONTROLLED RECTIFIERS

REVERSE BLOCKING

THYRISTORS

DESCRIPTION

PNPN devices designed for high volume,

line-powered consumer applications such as relay

and lamp drivers, small motor controls, gate drivers

for larger thyristors, and sensing and detection

circuits. Supplied in an inexpensive plastic TO-92

package which is readily adaptable for use in

automatic insertion equipment.

DESCRIPTION

*Sensitive Gate Allows Triggering by Micro controllers

and Other Logic circuits

TO-92

*Blocking Voltage to 600V

*On-State Current Rating of 0.8A RMS at 80°C

*High Surge Current Capability – 10A

*Minimum and Maximum Values of IGT, VGT and IH

Specified for Ease of Design

*Immunity to dV/dt – 20V/µsec Minimum at 110°C

*Glass-Passivated Surface for Reliability and

Uniformity

*Pb-free plating product number:MCR100L

1:CATHODE 2:GATE 3:ANODE

THERMAL CHARACTERISTICS

PARAMETER

SYMBOL

R_θJC

MAX

UNIT

°C/W

°C

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

Lead Solder Temperature

R_θJA

200

260

T_L

(<1/16” from case, 10 secs max)

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

MAX

UNIT

Peak Repetitive Off-State Voltage(note)

(T_J=-40 to 110°C, Sine Wave, 50 to 60Hz; Gate Open)

MCR100-4

VDRM,VRRM

200

400

600

0.8

MCR100-6

MCR100-8

On-Sate RMS Current

IT(RMS)

ITSM

(Tc=80°C) 180° Condition Angles

Peak Non-Repetitive Surge Current

(1/2 cycle, Sine Wave, 60Hz, T_J=25°C)

UTC UNISONIC TECHNOLOGIES CO., LTD.

QW-R301-004,B

12 3 4

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