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MCR100-8C PDF预览

MCR100-8C

更新时间: 2024-11-25 05:18:55
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友顺 - UTC /
页数 文件大小 规格书
4页 65K
描述
Silicon Controlled Rectifier

MCR100-8C 数据手册

 浏览型号MCR100-8C的Datasheet PDF文件第2页浏览型号MCR100-8C的Datasheet PDF文件第3页浏览型号MCR100-8C的Datasheet PDF文件第4页 
UTC MCR100  
SCR  
SENSITIVE GATE SILICON  
CONTROLLED RECTIFIERS  
REVERSE BLOCKING  
THYRISTORS  
DESCRIPTION  
PNPN devices designed for high volume,  
line-powered consumer applications such as relay  
and lamp drivers, small motor controls, gate drivers  
for larger thyristors, and sensing and detection  
circuits. Supplied in an inexpensive plastic TO-92  
package which is readily adaptable for use in  
automatic insertion equipment.  
1
DESCRIPTION  
*Sensitive Gate Allows Triggering by Micro controllers  
and Other Logic circuits  
TO-92  
*Blocking Voltage to 600V  
*On-State Current Rating of 0.8A RMS at 80°C  
*High Surge Current Capability – 10A  
*Minimum and Maximum Values of IGT, VGT and IH  
Specified for Ease of Design  
*Immunity to dV/dt – 20V/µsec Minimum at 110°C  
*Glass-Passivated Surface for Reliability and  
Uniformity  
*Pb-free plating product number:MCR100L  
1:CATHODE 2:GATE 3:ANODE  
THERMAL CHARACTERISTICS  
PARAMETER  
SYMBOL  
RθJC  
MAX  
75  
UNIT  
°C/W  
°C/W  
°C  
Thermal Resistance, Junction to Case  
Thermal Resistance, Junction to Ambient  
Lead Solder Temperature  
RθJA  
200  
260  
TL  
(<1/16” from case, 10 secs max)  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
MAX  
UNIT  
V
Peak Repetitive Off-State Voltage(note)  
(TJ=-40 to 110°C, Sine Wave, 50 to 60Hz; Gate Open)  
MCR100-4  
VDRM,VRRM  
200  
400  
600  
0.8  
MCR100-6  
MCR100-8  
On-Sate RMS Current  
IT(RMS)  
ITSM  
A
A
(Tc=80°C) 180° Condition Angles  
Peak Non-Repetitive Surge Current  
(1/2 cycle, Sine Wave, 60Hz, TJ=25°C)  
10  
1
UTC UNISONIC TECHNOLOGIES CO., LTD.  
QW-R301-004,B  

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