Datasheet > MCR100-8(LS)

MCR100-8(LS)

更新时间： 2024-11-25 14:55:31

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美台 - DIODES		栅
页数	文件大小	规格书
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描述
Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors

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MCR100-8(LS) 数据手册

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MCR100-8(LS)

SENSITIVE GATE

SILICON CONTROLLED RECTIFIERS

REVERSE BLOCKING THYRISTORS

SCR_S0.25 AMPERES RMS 600 VOLTS

SOT-23

FEATURES

• Sensitive gate allows triggering by microcontrollers and other

logic circuits.

• Blocking voltage to 600 volts.

SOT-23

DIM.

MIN.

0.89

0.30

0.085

2.75

1.20

0.85

1.70

2.10

0.0

MAX.

1.20

0.51

0.18

3.04

1.60

1.05

2.10

2.75

0.1

• On-state current rating of 0.25 amperes RMS at +80°C.

• High surge current capability – 9 Amperes.

• Minimum and maximum values of I_GT, V_GTand I_H

specified for ease of design.

• Immunity to dv/dt – 20V/μs minimum at T_J= +110°C

• Glass-passivated surface for reliability and uniformity.

• Autoclave test meets JESD22-A102-C, condition B.

• Lead-Free Finish; RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

0.60 TYP.

0.35

0.65

MECHANICAL DATA

 Package: SOT-23

All dimensions in millimeter

 Package Material: molding plastic. Pb-Free package

 Moisture Sensitivity: Level 3 per J-STD-020

 Terminals: Finish – Matte Tin Plated Leads, Solderable per

MIL-STD-202, Method 208

PIN ASSIGNMENT

Gate

Cathode

Anode

• Weight : 0.007 ounces, 0.2 grams (Approximate)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T_J= +25℃, unless otherwise noticed.)

ABSOLUTE RATINGS

CHARACTERISTICS

Peak repetitive off-state voltage (Note 4)

T_J= -40 C to +110 C, sine wave, 50 to 60 H_Z, gate open

On-state RMS current (T_C= +80 C) 180 c conduction angels

SYMBOL

VALUE

UNIT

V_DRM

V_RRM

600

I_T(RMS)

I_TSM

I²t

0.25

Peak non-repetitive surge current 1/2 cycle sine wave 60H_Z@ T_J= +25

Circuit fusing consideration @ t = 8.3ms

°C

0.336

A²s

P_GM

P_G(AV)

I_GM

0.1

Forward peak gate power, pulse width

Forward average gate power, t 8.3ms @ Ta = +25

1.0 s @ Ta = +25

1.0ms @ Ta = +25°C

≦ 1.0μs @ Ta = +25°C

0.1

≦

°C

Forward peak gate current, Pulse width

Reverse peak gate voltage, Pulse width

≦

°C

V_GRM

T_J

≦

Operating Junction Temperature Range

Storage Temperature Range

Notes:

-40 to +110

-40 to +150

°C

T_STG

1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied.

2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony

compounds.

4. V_DRMand V_RRMfor all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; positive gate voltage shall not be applied concurrent with

negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.

1 of 6

www.diodes.com

October 2023

MCR100-8(LS)

Document number: DS45678 Rev. 5 - 2

12 3 4 5 6

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与MCR100-8(LS)相关器件

型号	品牌	获取价格	描述	数据表
MCR100-8A	YENYO	获取价格	Sensitive Gate / Silicon Controlled Rectifiers
MCR100-8A	MICRO-ELECTRONICS	获取价格	0.8A SCR
MCR100-8-A1	TSC	获取价格	Thyristors
MCR100-8-A1G	TSC	获取价格	Thyristors
MCR100-8AA	UTC	获取价格	Silicon Controlled Rectifier
MCR100-8AA(SOT-89)	UTC	获取价格	Silicon Controlled Rectifier, 800mA I(T), 600V V(DRM)
MCR100-8AA(TO-92)	UTC	获取价格	Silicon Controlled Rectifier, 600V V(DRM)
MCR100-8AB	UTC	获取价格	Silicon Controlled Rectifier
MCR100-8AB(TO-92)	UTC	获取价格	Silicon Controlled Rectifier, 600V V(DRM)
MCR100-8AC	UTC	获取价格	Silicon Controlled Rectifier

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