Datasheet > MCR100-8

MCR100-8

更新时间： 2024-11-24 12:17:11

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描述
SENSITIVE GATE SILICON CONTROLLED RECTIFIER

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MCR100-8 数据手册

NCR169D

Advance Information

STC MCR100-8

General Purpose

STC OT391

Sensitive Gate

Silicon Controlled Rectifier

Reverse Blocking Thyristor

SCR

0.8 AMPERES RMS

600 VOLTS

PNPN device designed for line-powered general purpose

applications such as relay and lamp drivers, small motor controls, gate

drivers for larger thyristors, and sensing and detection circuits.

Supplied in a cost effective plastic TO-92 package.

• Sensitive Gate Allows Direct Triggering by Microcontrollers and

Other Logic Circuits

• On–State Current Rating of 0.8 Amperes RMS at 80°C

• Surge Current Capability – 10 Amperes

• Immunity to dV/dt – 20 V/µsec Minimum at 110°C

• Glass-Passivated Surface for Reliability and Uniformity

• Blocking Voltage to 600 Volts

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Symbol

Value

Unit

Peak Repetitive Off–State Voltage (Note 1.)

600

Volts

TO−92 (TO−226)

CASE 029

DRM,

(T = *40 to 110°C, Sine Wave, 50 to

RRM

60 Hz; Gate Open)

STYLE 10

On-State RMS Current

(T = 80°C) 180° Conduction Angles

0.8

Amp

T(RMS)

PIN ASSIGNMENT

Cathode

Peak Non-Repetitive Surge Current

(1/2 Cycle, Sine Wave, 60 Hz,

Amps

TSM

T = 25°C)

Gate

Anode

Circuit Fusing Consideration (t = 10 ms)

I t

0.415

0.1

A s

Forward Peak Gate Power

Watt

Amp

Volts

°C

(T = 25°C, Pulse Width v 1.0 µs)

Forward Average Gate Power

0.10

1.0

G(AV)

(T = 25°C, t = 20 ms)

Forward Peak Gate Current

(T = 25°C, Pulse Width v 1.0 µs)

Reverse Peak Gate Voltage

5.0

GRM

(T = 25°C, Pulse Width v 1.0 µs)

Operating Junction Temperature Range

–40 to

110

@ Rate V

and V

RRM

DRM

Storage Temperature Range

stg

–40 to

150

°C

(1) V

DRM

and V for all types can be applied on a continuous basis. Ratings

RRM

apply for zero or negative gate voltage; however, positive gate voltage shall

not be applied concurrent with negative potential on the anode. Blocking

voltages shall not be tested with a constant source such that the voltage

ratings of the devices are exceeded.

Publication Order Number:

December, 2000 – Rev. 0

NCR169D/D

12 3 4

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