Datasheet > MCR100-8

MCR100-8

更新时间： 2024-11-20 11:04:23

品牌	Logo	应用领域
TGS		晶体晶体管
页数	文件大小	规格书
2页	68K
描述
SOT-89 Plastic-Encapsulate Transistors (SOT-89)

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中文翻译

获取价格

数据手册

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MCR100-8 数据手册

TIGER ELECTRONIC CO.,LTD

SOT-89 Plastic-Encapsulate Transistors

SOT-89

MCK 100- 6，- 8 Silicon Planar PNPN Thyristor

FEATURES

1.KATHODE

2.ANODE

3.GATE

Current-I_GT: 200 μA

I_TRMS0.8 A

_DRM: MCK100-6：400 V

MCK100-8：600 V

Operating and storage junction temperature range

T_J，T_stg: -55℃ to +150℃

ELECTRICAL CHARACTERISTICS（Tamb=25℃

unless otherwise specified）

Parameter

Symbol

V_TM

Test conditions

I_TM=1A

MIN

MAX

1.7

UNIT

On state voltage

Gate trigger voltage

V_GT

V_AK=7V

0.8

Peak Repetitive forward and reverse

blocking voltage

V_DRM

_DRM= 10 μA ,V_MAX=1010 V

400

600

AND

MCK100-6

V_RRM

MCK100-8

Peak forward or reverse blocking

Current

I_DRM

I_RRM

V_AK= Rated

µA

V_DRMor V_RRM

Holding current

I_H

I_HL= 20 mA , Av = 7 V

Gate trigger current

I_GT

V_AK=7V

µA

200

* Forward current applied for 1 ms maximum duration，duty cycle≤1%。

中文翻译

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MCR100-8(LS)	DIODES	获取价格	Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors
MCR100-8A	YENYO	获取价格	Sensitive Gate / Silicon Controlled Rectifiers
MCR100-8A	MICRO-ELECTRONICS	获取价格	0.8A SCR
MCR100-8-A1	TSC	获取价格	Thyristors
MCR100-8-A1G	TSC	获取价格	Thyristors
MCR100-8AA	UTC	获取价格	Silicon Controlled Rectifier
MCR100-8AA(SOT-89)	UTC	获取价格	Silicon Controlled Rectifier, 800mA I(T), 600V V(DRM)
MCR100-8AA(TO-92)	UTC	获取价格	Silicon Controlled Rectifier, 600V V(DRM)
MCR100-8AB	UTC	获取价格	Silicon Controlled Rectifier
MCR100-8AB(TO-92)	UTC	获取价格	Silicon Controlled Rectifier, 600V V(DRM)