Datasheet > MCR100-8

MCR100-8

更新时间： 2024-11-20 04:16:23

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描述
Sensitive Gate Silicon Controlled Rectifiers

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MCR100-8 数据手册

SemiWell Semiconductor

MCR100-8

Sensitive Gate

Silicon Controlled Rectifiers

Symbol

2. Gate

○

Features

3. Anode

1. Cathode

◆ Repetitive Peak Off-State Voltage : 600V

◆ R.M.S On-State Current ( I

= 0.8 A )

T(RMS)

◆ Low On-State Voltage (1.2V(Typ.)@ I

)

TO-92

General Description

Sensitive triggering SCR is suitable for the application where

gate current limited such as small motor control, gate driver

for large SCR, sensing and detecting circuits.

Absolute Maximum Ratings ( T_J= 25°C unless otherwise specified )

Symbol

V_DRM

Parameter

Repetitive Peak Off-State Voltage

Average On-State Current

R.M.S On-State Current

Condition

Ratings

600

Units

Half Sine Wave : T_C= 74 °C

All Conduction Angle

I_T(AV)

0.5

I_T(RMS)

0.8

1/2 Cycle, 60Hz, Sine Wave

Non-Repetitive

I_TSM

I²t

Surge On-State Current

I²t for Fusing

A²s

t = 8.3ms

0.415

P_GM

P_G(AV)

I_FGM

V_RGM

T_J

Forward Peak Gate Power Dissipation

Forward Average Gate Power Dissipation

Forward Peak Gate Current

Reverse Peak Gate Voltage

Operating Junction Temperature

Storage Temperature

0.1

T^A=25°C, Pulse Width ≤ 1.0㎲

TA =25°C, t = 8.3ms

5.0

- 40 ~ 125

- 40 ~ 150

°C

T_STG

Oct, 2002. Rev. 2

1/5

12 3 4 5

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与MCR100-8相关器件

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MCR100-8(LS)	DIODES	获取价格	Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors
MCR100-8A	YENYO	获取价格	Sensitive Gate / Silicon Controlled Rectifiers
MCR100-8A	MICRO-ELECTRONICS	获取价格	0.8A SCR
MCR100-8-A1	TSC	获取价格	Thyristors
MCR100-8-A1G	TSC	获取价格	Thyristors
MCR100-8AA	UTC	获取价格	Silicon Controlled Rectifier
MCR100-8AA(SOT-89)	UTC	获取价格	Silicon Controlled Rectifier, 800mA I(T), 600V V(DRM)
MCR100-8AA(TO-92)	UTC	获取价格	Silicon Controlled Rectifier, 600V V(DRM)
MCR100-8AB	UTC	获取价格	Silicon Controlled Rectifier
MCR100-8AB(TO-92)	UTC	获取价格	Silicon Controlled Rectifier, 600V V(DRM)