Datasheet > MCR100-8

MCR100-8

更新时间： 2024-11-24 04:16:23

品牌	Logo	应用领域
TRSYS		可控硅整流器
页数	文件大小	规格书
1页	177K
描述
Silicon Controlled Rectifier

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中文翻译

获取价格

数据手册

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MCR100-8 数据手册

MCR100 SERIES

Silicon Controlled Rectifier

V_RRM= 100-600V, I_F(RMS)= 0.8A

Symbol

(Tj = 25 C unless stated otherwise)

MAXIMUM RATINGS

Symbol

MCR100-3 MCR100-4

100 200

MCR100-6

MCR100-8

Unit

Parameter

V_RRM

I_T(RMS)

I_TSM

Repetitive Peak Off-State Voltage

400

600

Volt

Amp

0.8 at tc = 85 C

On-State RMS Current

Peak Non-Repetitive Surge Current

0.415

A /S

I T for Fusing 8.3ms

I T

V_GRM

I_GM

Volt

Peak Reverse Gate Voltage

Peak Gate Current

0.1

Amp

Watt

P_G(AV)

Forward Average Gate Power

Forward Peak Gate Power

1.0

P_GM

T_(STG)

-40 to +150

Maximum Storage Temperature Range

Maximum Junction Temperature Range

-40 to +110

ELECTRICAL CHARACTERISICS at

Parameter

Tj = 25 C Maximum. Unless stated Otherwise

Value

Typ

Condition

Symbol

I_TM= 1.0 Amps

V_TM

Unit

Volt

Max

Min

Peak Forward On-State Voltage

Repetitive Peak Reverse Current

Gate Trigger Voltage

1.7

100

0.80

200

V_R= V_RRM. t_J=110 C

I_RRM

V_GT

I_GT

I_L

Volt

0.62

µA

Gate Trigger Current

Latch Current

0.60

0.50

10.0

5.0

Holding Current

I_H

C/W

R_TH

Thermal Resistance (Junction to Case)

(J-c)

V/µS

A/µS

dV/dt

dA/dt

Rate of Rise of Off-State Voltage

Rate of Rise of Off-State Current

Mechanical Outline

0.165(4.19) max

0.125(3.18) min

0.205(5.20) max

0.175 (4.45) min

0.210(5.33) max

0.170 (4.32) min

Cathode Gate Anode

Case:TO - 92

0.500(12.70) min

0.021(50.533) max

0.016 (0.407) min

0.055(1.39) max

0.045 (1.15) min

0.055(1.39) max

0.045 (1.15) min

0.135(3.43) min

All Dimensions in Inches (Millimeters)

Third Angle Projection

0.105(2.66) max

0.080(2.04) min

中文翻译

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