Datasheet > MCR100-6S

MCR100-6S

更新时间： 2024-11-20 11:04:23

品牌	Logo	应用领域
元耀 - YENYO		可控硅整流器栅
页数	文件大小	规格书
4页	146K
描述
Sensitive Gate / Silicon Controlled Rectifiers

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中文翻译

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数据手册

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MCR100-6S 数据手册

MCR100 Series

0.8A SCRs

Sensitive Gate / Silicon Controlled Rectifiers

Main features

Symbol

Value

0.8A

Unit

I_T(RMS)

V_DRM/V_RRM

I_GT(Q1)

400 and 600

200

DESCRIPTION

These devices are intened to be interfaced directly to

microcontrollers, logic integrated circuits and other

low power gate trigger circuits.

Weight : 0.22 gram

TO92

Absolute maximum ratings

Symbol

Parameter

Value

Unit

RMS on-state current

( 180° conduction angle )

I_T(RMS)

0.8

F = 50Hz

F = 60Hz

t_p= 10ms

t = 10ms

t = 8.3ms

Non repetitive surge on-state current

( 1/2 Cycle,Sine Wave , Tj initial=25℃ )

I_TSM

I²t

I²t Value for fusing

0.24

A²s

Critical rate of rise of on-state current

I_G= 10mA di_G= 0.1A/us

A/us

dl/dt

Peak gate current

I_GM

Average gate power dissipation

0.1

P_G(AV)

-40 to +150

-40 to +110

T _stg

T_j

Storage junction temperature range

Operating junction temperature range

℃

Aprit.2008

Rev.1

1/5

12 3 4

中文翻译

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