Datasheet > MCR100-6U

MCR100-6U

更新时间： 2024-11-25 14:53:07

品牌	Logo	应用领域
先科 - SWST		可控硅
页数	文件大小	规格书
3页	163K
描述
可控硅

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数据手册

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MCR100-6U 数据手册

MCR100…U Series

Sensitive Gate Silicon Controlled Rectifiers

Reverse Blocking Thyristors

Absolute Maximum Ratings (T_a= 25℃)

Parameter

Peak Repetitive Off-State Voltage ⁴⁾

Symbol

Value

Unit

(T_J= -40℃ to 110℃, Sine Wave, 50 to 60 Hz, Gate Open)

200

400

600

_DRM, V_RRM

MCR100-4U

MCR100-6U

MCR100-8U

On-State RMS Current

I_T(RMS)

I_TSM

0.8

(T_C= 80 ℃) 180 ℃onduction Angles

Peak Non-Repetitive Surge Current

(1/2 Cycle, Sine Wave, 60 Hz, T_J= 25℃)

Circuit Fusing Considerations (t = 8.3 ms)

Forward Peak Gate Power (Pulse Width ≤ 1 μs)

Forward Average Gate Power (t = 8.3 ms)

Peak Gate Current – Forward (Pulse Width ≤ 1 μs)

Peak Gate Voltage – Reverse (Pulse Width ≤ 1 μs)

Operating Junction Temperature Range

I²t

P_GM

P_G(AV)

I_GM

0.415

A²s

0.1

V_GRM

T_J

- 40 to + 110

- 40 to + 150

℃

Storage Temperature Range

Characteristics at T_a= 25 ℃

Parameter

T_Stg

Symbol

Max.

Unit

Peak Forward or Reverse Blocking Current ²⁾

at V_D= Rated V_DRMand V_RRM, R_GK= 1 KΩ

Peak Forward On-State Voltage ¹⁾

at I_TM= 1 A Peak

Gate Trigger Current ³⁾

I_DRM, I_RRM

V_TM

μA

1.7

I_GT

200

μA

at V_AK= 7 V, R_L= 100 Ω

Holding Current ²⁾

T_C= 25℃

at V_AK= 7 V, Initiating Current = 20 mA

I_H

T_C= - 40℃

Latch Current

at V_AK= 7 V, Ig = 200 μA

T_C= 25℃

T_C= - 40℃

I_L

Gate Trigger Voltage ³⁾

at V_AK= 7 V, R_L= 100 Ω

T_C= 25℃

T_C= - 40℃

0.8

1.2

V_GT

¹⁾Indicates pulse teat width ≤ 1 ms, duty cycle ≤ 1%

= 1 KΩ included in measurement

³⁾Does not include R_GKin measurement

DRM

and V_RRMfor all types can be applied on continous basis. Ratings apply for zero negative gate voltage; however,

positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be

tested with a constant current sourse such that the voltage ratings of the devices are exceeded.

Dated: 27/12/2013 Rev: 01

12 3

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