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MCR100-8 PDF预览

MCR100-8

更新时间: 2024-11-25 14:53:55
品牌 Logo 应用领域
先科 - SWST 可控硅
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4页 530K
描述
可控硅

MCR100-8 数据手册

 浏览型号MCR100-8的Datasheet PDF文件第2页浏览型号MCR100-8的Datasheet PDF文件第3页浏览型号MCR100-8的Datasheet PDF文件第4页 
MCR100-3 … MCR100-8  
Silicon Unidirectional Thyristors  
A
G
1. Cathode 2. Gate 3. Anode  
TO-92 Plastic Package  
K
O
Absolute Maximum Ratings (TJ = 25 C unless otherwise noted)  
Parameter  
Symbol  
Value  
Unit  
V
Peak Repetitive Forward and Reverse Blocking  
Voltage 1) (TJ = 25 to 125 C, RGK = 1 KΩ)  
MCR100-3  
MCR100-4  
100  
200  
300  
400  
500  
600  
MCR100-5 VDRM and VRRM  
MCR100-6  
MCR100-7  
MCR100-8  
Forward Current RMS (All Conduction Angles)  
IT(RMS)  
ITSM  
I2t  
0.8  
A
A
Peak Forward Surge Current, TA = 25 C  
(1/2 Cycle, Sine Wave, 60 Hz)  
10  
Circuit Fusing Considerations (t = 8.3 ms)  
0.415  
0.1  
0.01  
1
A2s  
W
W
A
PGM  
PGF(AV)  
IGFM  
Forward Peak Gate Power (TA = 25 C, PW ≤ 1 µs)  
Forward Average Gate Power (TA = 25 C)  
Forward Peak Gate Current (TA = 25 C, PW ≤ 1 µs)  
Reverse Peak Gate Voltage (TA = 25 C PW ≤ 1 µs)  
VGRM  
5
V
Operating Junction Temperature Range  
at Rated VRRM and VDRM  
Tj  
- 40 to + 125  
- 40 to + 150  
C  
C  
Storage Temperature Range  
Tstg  
1)  
V
and VRRM for types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate  
DRM  
voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant  
current source such that the voltage ratings of the device are exceeded.  
®
1 / 4  
Dated04/07/2022 Rev01  

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