Datasheet > MCR100-8

MCR100-8

更新时间： 2024-11-20 12:49:55

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描述
Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors

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中文翻译

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数据手册

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MCR100-8 数据手册

MCR100-6/MCR100-8

Sensitive Gate Silicon Controlled Rectifiers

SCRs

Reverse Blocking Thyristors

0.8 A RMS

P b

Lead(Pb)-Free

400/600 Voltage

1.Cathode

2.Gate

3.Anode

TO-92

Maximum Ratings (T =25°C unless otherwise noted)

Rating

Symbol

MCR100-6

MCR100-8

Unit

Repetitive Peak Oﬀ-stage Voltage

400

600

DRM

Collector-Base Voltage

0.8

TRMS

Junction Temperature Range

Storage Temperature Range

°C

+150

stg

-55 to +150

ELECTRICAL CHARACTERISTICS

Characteristics

Symbol

Min

Max

Unit

On State Voltage⁽¹⁾

1.7

= 1A

Gate Trigger Voltage

= 7V

0.8

Peak Repetitve Forward and Reverse Blocking Voltage

10μA , V

= 10V

MAX

DRM, RRM

400

600

MCR100-6

MCR100-8

DRM =

Peak Forward or Reverse Blocking Current

μA

DRM, RRM

= Rated, V

or V

DRM RRM

Holding Current

= 20mA, A = 7V

Gate Trigger Current

= 7V

μA

200

Note 1. Forward current applied for 1 ms maximum duration, duty cycle ≤ 1%

WEITRON

http://www.weitron.com.tw

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30-Jan-07

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与MCR100-8相关器件

型号	品牌	获取价格	描述	数据表
MCR100-8(LS)	DIODES	获取价格	Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors
MCR100-8A	YENYO	获取价格	Sensitive Gate / Silicon Controlled Rectifiers
MCR100-8A	MICRO-ELECTRONICS	获取价格	0.8A SCR
MCR100-8-A1	TSC	获取价格	Thyristors
MCR100-8-A1G	TSC	获取价格	Thyristors
MCR100-8AA	UTC	获取价格	Silicon Controlled Rectifier
MCR100-8AA(SOT-89)	UTC	获取价格	Silicon Controlled Rectifier, 800mA I(T), 600V V(DRM)
MCR100-8AA(TO-92)	UTC	获取价格	Silicon Controlled Rectifier, 600V V(DRM)
MCR100-8AB	UTC	获取价格	Silicon Controlled Rectifier
MCR100-8AB(TO-92)	UTC	获取价格	Silicon Controlled Rectifier, 600V V(DRM)