Datasheet > MCR100-7

MCR100-7

更新时间： 2024-11-25 14:53:55

品牌	Logo	应用领域
先科 - SWST		可控硅
页数	文件大小	规格书
4页	530K
描述
可控硅

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中文翻译

获取价格

数据手册

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MCR100-7 数据手册

MCR100-3 … MCR100-8

Silicon Unidirectional Thyristors

1. Cathode 2. Gate 3. Anode

TO-92 Plastic Package

Absolute Maximum Ratings (T_J= 25 C unless otherwise noted)

Parameter

Symbol

Value

Unit

Peak Repetitive Forward and Reverse Blocking

Voltage ¹⁾(T_J= 25 to 125 C, R_GK= 1 KΩ)

MCR100-3

MCR100-4

100

200

300

400

500

600

MCR100-5 V_DRMand V_RRM

MCR100-6

MCR100-7

MCR100-8

Forward Current RMS (All Conduction Angles)

I_T(RMS)

I_TSM

I²t

0.8

Peak Forward Surge Current, T_A= 25 C

(1/2 Cycle, Sine Wave, 60 Hz)

Circuit Fusing Considerations (t = 8.3 ms)

0.415

0.1

0.01

A²s

P_GM

P_GF(AV)

I_GFM

Forward Peak Gate Power (T_A= 25 C, PW ≤ 1 µs)

Forward Average Gate Power (T_A= 25 C)

Forward Peak Gate Current (T_A= 25 C, PW ≤ 1 µs)

Reverse Peak Gate Voltage (T_A= 25 C PW ≤ 1 µs)

V_GRM

Operating Junction Temperature Range

at Rated V_RRMand V_DRM

T_j

- 40 to + 125

- 40 to + 150

C

Storage Temperature Range

T_stg

and V_RRMfor types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate

DRM

voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant

current source such that the voltage ratings of the device are exceeded.

1 / 4

Dated：04/07/2022 Rev：01

12 3 4

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