是否Rohs认证: | 不符合 | 生命周期: | Transferred |
零件包装代码: | QFP | 包装说明: | LQFP, QFP100,.63X.87 |
针数: | 100 | Reach Compliance Code: | unknown |
ECCN代码: | 3A991 | HTS代码: | 8542.31.00.01 |
风险等级: | 5.52 | Is Samacsys: | N |
最长访问时间: | 10 ns | I/O 类型: | COMMON |
JESD-30 代码: | R-PQFP-G100 | 长度: | 20 mm |
内存密度: | 1179648 bit | 内存集成电路类型: | CACHE SRAM |
内存宽度: | 36 | 功能数量: | 1 |
端子数量: | 100 | 字数: | 32768 words |
字数代码: | 32000 | 工作模式: | SYNCHRONOUS |
最高工作温度: | 70 °C | 最低工作温度: | |
组织: | 32KX36 | 输出特性: | 3-STATE |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | LQFP |
封装等效代码: | QFP100,.63X.87 | 封装形状: | RECTANGULAR |
封装形式: | FLATPACK, LOW PROFILE | 并行/串行: | PARALLEL |
电源: | 3.3 V | 认证状态: | Not Qualified |
座面最大高度: | 1.6 mm | 最大待机电流: | 0.05 A |
最小待机电流: | 3.14 V | 子类别: | SRAMs |
最大压摆率: | 0.31 mA | 最大供电电压 (Vsup): | 3.6 V |
最小供电电压 (Vsup): | 3.135 V | 标称供电电压 (Vsup): | 3.3 V |
表面贴装: | YES | 技术: | BICMOS |
温度等级: | COMMERCIAL | 端子形式: | GULL WING |
端子节距: | 0.65 mm | 端子位置: | QUAD |
宽度: | 14 mm | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MCM69F536CTQ10R | MOTOROLA |
获取价格 |
32K x 36 Bit Flow-Through BurstRAM Synchronous Fast Static RAM | |
MCM69F536CTQ10R | NXP |
获取价格 |
IC,SYNC SRAM,32KX36,BICMOS-TTL,QFP,100PIN,PLASTIC | |
MCM69F536CTQ12 | MOTOROLA |
获取价格 |
32K x 36 Bit Flow-Through BurstRAM Synchronous Fast Static RAM | |
MCM69F536CTQ12R | MOTOROLA |
获取价格 |
32K x 36 Bit Flow-Through BurstRAM Synchronous Fast Static RAM | |
MCM69F536CTQ12R | NXP |
获取价格 |
IC,SYNC SRAM,32KX36,BICMOS-TTL,QFP,100PIN,PLASTIC | |
MCM69F536CTQ8.5 | MOTOROLA |
获取价格 |
32K x 36 Bit Flow-Through BurstRAM Synchronous Fast Static RAM | |
MCM69F536CTQ8.5 | NXP |
获取价格 |
IC,SYNC SRAM,32KX36,BICMOS-TTL,QFP,100PIN,PLASTIC | |
MCM69F536CTQ8.5R | MOTOROLA |
获取价格 |
32K x 36 Bit Flow-Through BurstRAM Synchronous Fast Static RAM | |
MCM69F536CTQ8.5R | NXP |
获取价格 |
32KX36 CACHE SRAM, 8.5ns, PQFP100, TQFP-100 | |
MCM69F536CTQ9 | MOTOROLA |
获取价格 |
32K x 36 Bit Flow-Through BurstRAM Synchronous Fast Static RAM |