是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | PLASTIC, LCC-52 | Reach Compliance Code: | unknown |
ECCN代码: | 3A991.B.2.A | HTS代码: | 8542.32.00.41 |
风险等级: | 5.92 | 最长访问时间: | 8.5 ns |
其他特性: | SELF-TIMED WRITE; BYTE WRITE; BURST COUNTER | I/O 类型: | COMMON |
JESD-30 代码: | S-PQCC-J52 | JESD-609代码: | e0 |
长度: | 19.1262 mm | 内存密度: | 1179648 bit |
内存集成电路类型: | CACHE SRAM | 内存宽度: | 18 |
功能数量: | 1 | 端口数量: | 1 |
端子数量: | 52 | 字数: | 65536 words |
字数代码: | 64000 | 工作模式: | SYNCHRONOUS |
最高工作温度: | 70 °C | 最低工作温度: | |
组织: | 64KX18 | 输出特性: | 3-STATE |
可输出: | YES | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | QCCJ | 封装等效代码: | LDCC52,.8SQ |
封装形状: | SQUARE | 封装形式: | CHIP CARRIER |
并行/串行: | PARALLEL | 电源: | 5 V |
认证状态: | Not Qualified | 座面最大高度: | 4.57 mm |
最大待机电流: | 0.095 A | 最小待机电流: | 4.75 V |
子类别: | SRAMs | 最大压摆率: | 0.29 mA |
最大供电电压 (Vsup): | 5.25 V | 最小供电电压 (Vsup): | 4.75 V |
标称供电电压 (Vsup): | 5 V | 表面贴装: | YES |
技术: | BICMOS | 温度等级: | COMMERCIAL |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | J BEND |
端子节距: | 1.27 mm | 端子位置: | QUAD |
宽度: | 19.1262 mm | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MCM67H618AFN9 | MOTOROLA |
获取价格 |
64K x 18 Bit BurstRAM Synchronous Fast Static RAM | |
MCM67H618B | MOTOROLA |
获取价格 |
64K x 18 Bit BurstRAM Synchronous Fast Static RAM | |
MCM67H618BFN10 | MOTOROLA |
获取价格 |
64K x 18 Bit BurstRAM Synchronous Fast Static RAM | |
MCM67H618BFN10R | MOTOROLA |
获取价格 |
Cache SRAM, 64KX18, 10ns, BICMOS, PQCC52, PLASTIC, LCC-52 | |
MCM67H618BFN12 | MOTOROLA |
获取价格 |
64K x 18 Bit BurstRAM Synchronous Fast Static RAM | |
MCM67H618BFN12R | MOTOROLA |
获取价格 |
64KX18 CACHE SRAM, 12ns, PQCC52, PLASTIC, LCC-52 | |
MCM67H618BFN9 | MOTOROLA |
获取价格 |
64K x 18 Bit BurstRAM Synchronous Fast Static RAM | |
MCM67H618BFN9R | MOTOROLA |
获取价格 |
64KX18 CACHE SRAM, 9ns, PQCC52, PLASTIC, LCC-52 | |
MCM67H618FN12 | MOTOROLA |
获取价格 |
64KX18 CACHE SRAM, PQCC52, PLASTIC, LCC-52 | |
MCM67H618FN18 | MOTOROLA |
获取价格 |
Cache SRAM, 64KX18, 18ns, BICMOS, PQCC52, PLASTIC, LCC-52 |