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MCH3302

更新时间： 2024-02-27 04:57:17
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三洋 - SANYO 开关
页数 文件大小 规格书
4页 43K
描述
Ultrahigh-Speed Switching Applications

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中文翻译

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MCH3302 技术参数

生命周期：Obsolete包装说明：SMALL OUTLINE, R-PDSO-F3
针数：3Reach Compliance Code：unknown
ECCN代码：EAR99风险等级：5.84
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：30 V
最大漏极电流 (Abs) (ID)：1 A最大漏极电流 (ID)：1 A
最大漏源导通电阻：0.46 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：R-PDSO-F3元件数量：1
端子数量：3工作模式：ENHANCEMENT MODE
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
极性/信道类型：P-CHANNEL最大功率耗散 (Abs)：1 W
认证状态：Not Qualified子类别：Other Transistors
表面贴装：YES端子形式：FLAT
端子位置：DUAL晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

MCH3302 数据手册

 浏览型号MCH3302的Datasheet PDF文件第2页浏览型号MCH3302的Datasheet PDF文件第3页浏览型号MCH3302的Datasheet PDF文件第4页 
Ordering number:ENN6369  
P-Channel Silicon MOSFET  
MCH3302  
Ultrahigh-Speed Switching Applications  
Features  
Package Dimensions  
unit:mm  
· Low ON resistance.  
· Ultrahigh-speed swithcing.  
· 4V drive.  
2167  
[MCH3302]  
0.3  
0.15  
3
1
2
0.65  
2.0  
1 : Gate  
2 : Source  
3 : Drain  
SANYO : MCPH3  
Specifications  
Absolute Maximum Ratings at Ta = 25˚C  
Parameter  
Drain-to-Source Voltage  
Symbol  
Conditions  
Ratings  
Unit  
V
–30  
V
V
DSS  
Gate-to-Source Voltage  
Drain Current (DC)  
V
±20  
GSS  
I
–1  
A
D
Drain Current (pulse)  
Allowable Power Dissipation  
Channel Temperature  
Storage Temperature  
I
PW≤10µs, duty cycle≤1%  
Mounted on a ceramic board (900mm2×0.8mm)  
–4  
A
DP  
P
D
Tch  
1
150  
W
˚C  
˚C  
Tstg  
–55 to +150  
Electrical Characteristics at Ta = 25˚C  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
Unit  
min  
–30  
max  
Drain-to-Source Breakdown Voltage  
Zero-Gate Voltage Drain Current  
Gate-to-Source Leakage Current  
Cutoff Voltage  
V
I
=–1mA, V =0  
D GS  
V
µA  
µA  
V
(BR)DSS  
I
V
V
V
V
I
=–30V, V =0  
–10  
DSS  
DS  
GS  
DS  
DS  
GS  
I
=±16V, V =0  
DS  
±10  
GSS  
V
(off)  
=–10V, I =–1mA  
D
=–10V, I =–500mA  
D
=–500mA, V =–10V  
GS  
=–300mA, V =–4V  
GS  
–1.0  
670  
–2.5  
GS  
| yfs |  
Forward Transfer Admittance  
950  
350  
680  
90  
mS  
mΩ  
mΩ  
pF  
pF  
pF  
R
(on)1  
460  
950  
DS  
D
Static Drain-to-Source On-State Resistance  
R
(on)2  
I
DS  
D
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
Marking : JB  
Ciss  
V
V
V
=–10V, f=1MHz  
DS  
Coss  
Crss  
=–10V, f=1MHz  
DS  
=–10V, f=1MHz  
DS  
50  
20  
Continued on next page.  
Any and all SANYO products described or contained herein do not have specifications that can handle  
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s  
control systems, or other applications whose failure can be reasonably expected to result in serious  
physical and/or material damage. Consult with your SANYO representative nearest you before using  
any SANYO products described or contained herein in such applications.  
SANYO assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other  
parameters) listed in products specifications of any and all SANYO products described or contained  
herein.  
SANYO Electric Co.,Ltd. Semiconductor Company  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
31000TS (KOTO) TA-2454 No.6369-1/4  
1234

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