生命周期: | Transferred | 包装说明: | SMALL OUTLINE, R-PDSO-F3 |
针数: | 3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.38 |
Is Samacsys: | N | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 30 V | 最大漏极电流 (Abs) (ID): | 1 A |
最大漏极电流 (ID): | 1 A | 最大漏源导通电阻: | 0.55 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PDSO-F3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | P-CHANNEL |
最大功率耗散 (Abs): | 0.8 W | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | YES |
端子形式: | FLAT | 端子位置: | DUAL |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MCH3309 | SANYO |
获取价格 |
Ultrahigh-Speed Switching Applications |
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MCH3310 | SANYO |
获取价格 |
Ultrahigh-Speed Switching Applications |
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MCH3312 | SANYO |
获取价格 |
Ultrahigh-Speed Switching Applications |
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MCH3312 | ONSEMI |
获取价格 |
TRANSISTOR SMALL SIGNAL, FET, FET General Purpose Small Signal |
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MCH3312-TL-E | ONSEMI |
获取价格 |
TRANSISTOR,MOSFET,P-CHANNEL,30V V(BR)DSS,2A I(D),SC-70VAR |
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MCH3314 | SANYO |
获取价格 |
MCH3314 |
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MCH3315 | SANYO |
获取价格 |
P-Channel Silicon MOSFET General-Purpose Switching Device Applications |
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MCH3315 | ONSEMI |
获取价格 |
TRANSISTOR SMALL SIGNAL, FET, FET General Purpose Small Signal |
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MCH3315-TL-E | ONSEMI |
获取价格 |
TRANSISTOR,MOSFET,P-CHANNEL,60V V(BR)DSS,1A I(D),SOT-323VAR |
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MCH3316 | SANYO |
获取价格 |
P-Channel Silicon MOSFET General-Purpose Switching Device Applications |
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