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MCH3374-TL-W

更新时间： 2024-02-25 05:11:00
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
5页 571K
描述
Single P-Channel Power MOSFET -12V, -3A, 70mΩ, 3000-REEL

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中文翻译

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MCH3374-TL-W 技术参数

是否无铅： 不含铅生命周期：Lifetime Buy
Reach Compliance Code：not_compliant风险等级：5.68
Base Number Matches：1

MCH3374-TL-W 数据手册

 浏览型号MCH3374-TL-W的Datasheet PDF文件第2页浏览型号MCH3374-TL-W的Datasheet PDF文件第3页浏览型号MCH3374-TL-W的Datasheet PDF文件第4页浏览型号MCH3374-TL-W的Datasheet PDF文件第5页 
MCH3374  
Power MOSFET  
–12V, 70mΩ, –3A, Single P-Channel  
This Power MOSFET is produced using ON Semiconductor’s trench  
technology,which is specifically designed to minimize gate charge and low  
on resistance. This device is suitable for applications with low gate charge  
driving or low on resistance requirements.  
www.onsemi.com  
Features  
• Low On-Resistance  
• High Speed Switching  
• 1.8V drive  
• Pb-Free and RoHS compliance  
• Halogen Free compliance : MCH3374-TL-W  
V
R
(on) Max  
I
D Max  
DSS  
DS  
70mΩ@ −4.5V  
115mΩ@ −2.5V  
215mΩ@ −1.8V  
−12V  
−3A  
ELECTRICAL CONNECTION  
P-Channel  
Typical Applications  
• Load Switch  
3
SPECIFICATIONS  
ABSOLUTE MAXIMUM RATING at Ta = 25°C (Note 1, 2)  
Parameter  
Drain to Source Voltage  
Gate to Source Voltage  
Drain Current (DC)  
Symbol  
Value  
Unit  
V
V
V
−12  
8
DSS  
GSS  
1
1 : Gate  
2 : Source  
3 : Drain  
V
I
−3  
A
D
Drain Current (Pulse)  
2
I
−12  
A
DP  
PW ≤ 10μs, duty cycle ≤ 1%  
Power Dissipation  
PACKING TYPE : TL  
MARKING  
When mounted on ceramic substrate  
(900mm2  
× 0.8mm)  
P
1.0  
W
D
Junction Temperature  
Tj  
150  
°C  
°C  
QF  
Storage Temperature  
Tstg  
−55 to +150  
Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage  
the device. If any of these limits are exceeded, device functionality should not  
be assumed, damage may occur and reliability may be affected.  
2 : This product is designed to “ESD immunity<200V*”, so please take care when  
handling.  
TL  
ORDERING INFORMATION  
See detailed ordering and shipping  
information on page 5 of this data sheet.  
*Machine Model  
THERMAL RESISTANCE RATINGS  
Parameter  
Junction to Ambient  
When mounted on ceramic substrate  
(900mm2  
0.8mm)  
Symbol  
Value  
Unit  
R
θJA  
125  
°C/W  
×
© Semiconductor Components Industries, LLC, 2015  
July 2015 - Rev. 2  
1
Publication Order Number :  
MCH3374/D  
12345

中文翻译

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MCH3374-TL-W 替代型号

型号 品牌 替代类型 描述 数据表
MCH3377-TL-W ONSEMI

类似代替

 P-Channel Power MOSFET
MCH3374-TL-E ONSEMI

功能相似

 单 P 沟道，功率 MOSFET，-12V，-3A，70mΩ

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