5秒后页面跳转
MCH3409 PDF预览

MCH3409

更新时间: 2024-02-25 19:17:11
品牌 Logo 应用领域
三洋 - SANYO 开关
页数 文件大小 规格书
4页 30K
描述
Ultrahigh-Speed Switching Applications

MCH3409 数据手册

 浏览型号MCH3409的Datasheet PDF文件第2页浏览型号MCH3409的Datasheet PDF文件第3页浏览型号MCH3409的Datasheet PDF文件第4页 
Ordering number : ENN6911  
N-Channel Silicon MOSFET  
MCH3409  
Ultrahigh-Speed Switching Applications  
Preliminary  
Features  
Package Dimensions  
unit : mm  
Low ON-resistance.  
Ultrahigh-speed switching.  
2.5V drive.  
2167  
[MCH3409]  
0.3  
0.15  
3
1
2
0.65  
2.0  
1 : Gate  
2 : Source  
3 : Drain  
Specifications  
SANYO : MCPH3  
Absolute Maximum Ratings at Ta=25°C  
Parameter  
Drain-to-Source Voltage  
Symbol  
Conditions  
Ratings  
20  
Unit  
V
V
DSS  
GSS  
Gate-to-Source Voltage  
Drain Current (DC)  
V
±10  
V
I
2.0  
A
D
Drain Current (Pulse)  
Allowable Power Dissipation  
Channel Temperature  
Storage Temperature  
I
PW10µs, duty cycle1%  
8.0  
A
DP  
P
Mounted on a ceramic board (900mm20.8mm)  
0.9  
W
°C  
°C  
D
Tch  
150  
Tstg  
--55 to +150  
Electrical Characteristics at Ta=25°C  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
Unit  
min  
max  
Drain-to-Source Breakdown Voltage  
Zero-Gate Voltage Drain Current  
Gate-to-Source Leakage Current  
Cutoff Voltage  
V
I
=1mA, V =0  
20  
V
µA  
µA  
V
(BR)DSS  
D GS  
I
V
V
V
V
=20V, V =0  
GS  
1
DSS  
DS  
GS  
DS  
DS  
I
=±8V, V =0  
DS  
±10  
GSS  
V
(off)  
GS  
=10V, I =1mA  
0.4  
2.4  
1.3  
D
Forward Transfer Admittance  
yfs  
=10V, I =1A  
3.5  
100  
130  
S
D
R
(on)1  
I
D
I
D
=1A, V =4V  
GS  
130  
180  
mΩ  
mΩ  
DS  
Static Drain-to-Source On-State Resistance  
R
(on)2  
=0.5A, V =2.5V  
GS  
DS  
Marking : KJ  
Continued on next page.  
Any and all SANYO products described or contained herein do not have specifications that can handle  
applications that require extremely high levels of reliability, such as life-support systems, aircraft's  
control systems, or other applications whose failure can be reasonably expected to result in serious  
physical and/or material damage. Consult with your SANYO representative nearest you before using  
any SANYO products described or contained herein in such applications.  
SANYO assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other  
parameters) listed in products specifications of any and all SANYO products described or contained  
herein.  
SANYO Electric Co.,Ltd. Sem iconductor Com pany  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
11801 TS IM TA-3049 No.6911-1/4  

与MCH3409相关器件

型号 品牌 获取价格 描述 数据表
MCH3410 SANYO

获取价格

Ultrahigh-Speed Switching Applications
MCH3411 SANYO

获取价格

Ultrahigh-Speed Switching Applications
MCH3412 SANYO

获取价格

Ultrahigh-Speed Switching Applications
MCH3414 SANYO

获取价格

General-Purpose Switching Device Applications
MCH3415 SANYO

获取价格

N-Channel Silicon MOSFET General-Purpose Switching Device Applications
MCH3416 SANYO

获取价格

N-Channel Silicon MOSFET General-Purpose Switching Device Applications
MCH3420 SANYO

获取价格

MCH3420
MCH3421 SANYO

获取价格

N-Channel Silicon MOSFET General-Purpose Switching Device Applications
MCH3427 ONSEMI

获取价格

TRANSISTOR SMALL SIGNAL, FET, FET General Purpose Small Signal
MCH3427-TL-E ONSEMI

获取价格

TRANSISTOR,MOSFET,N-CHANNEL,20V V(BR)DSS,4A I(D),SOT-323VAR