5秒后页面跳转
捷配首页

Datasheet > MCH3456
MCH3456 PDF预览

MCH3456

更新时间： 2024-02-24 22:17:17
品牌 Logo 应用领域
三洋 - SANYO 开关通用开关
页数 文件大小 规格书
4页 41K
描述
General-Purpose Switching Device Applications

阅读下载

中文翻译

获取价格

MCH3456 技术参数

生命周期：Obsolete包装说明：SMALL OUTLINE, R-PDSO-F3
针数：3Reach Compliance Code：unknown
ECCN代码：EAR99风险等级：5.76
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：15 V
最大漏极电流 (Abs) (ID)：1.8 A最大漏极电流 (ID)：1.8 A
最大漏源导通电阻：0.16 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：R-PDSO-F3元件数量：1
端子数量：3工作模式：ENHANCEMENT MODE
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：0.8 W
认证状态：Not Qualified子类别：FET General Purpose Power
表面贴装：YES端子形式：FLAT
端子位置：DUAL晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

MCH3456 数据手册

 浏览型号MCH3456的Datasheet PDF文件第2页浏览型号MCH3456的Datasheet PDF文件第3页浏览型号MCH3456的Datasheet PDF文件第4页 
Ordering number : ENN8162  
N-Channel Silicon MOSFET  
General-Purpose Switching Device  
Applications  
MCH3456  
Features  
•
Low ON-resistance.  
•
Ultrahigh-speed switching.  
•
1.8V drive.  
Specifications  
Absolute Maximum Ratings at Ta=25°C  
Parameter  
Drain-to-Source Voltage  
Gate-to-Source Voltage  
Drain Current (DC)  
Symbol  
Conditions  
Ratings  
Unit  
V
V
15  
±10  
1.8  
7.2  
0.8  
150  
DSS  
GSS  
V
V
I
A
D
Drain Current (Pulse)  
Allowable Power Dissipation  
Channel Temperature  
Storage Temperature  
I
PW≤10µs, duty cycle≤1%  
Mounted on a ceramic board (900mm2✕0.8mm)  
A
DP  
P
W
°C  
°C  
D
Tch  
Tstg  
--55 to +150  
Electrical Characteristics at Ta=25°C  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
Unit  
min  
max  
Drain-to-Source Breakdown Voltage  
Zero-Gate Voltage Drain Current  
Gate-to-Source Leakage Current  
Cutoff Voltage  
V
I
=1mA, V =0  
15  
V
µA  
µA  
V
(BR)DSS  
D GS  
I
V
V
V
V
=15V, V =0  
GS  
1
DSS  
GSS  
DS  
GS  
DS  
DS  
I
=±8V, V =0  
DS  
±10  
V
(off)  
GS  
=10V, I =1mA  
0.4  
1.5  
1.3  
D
Forward Transfer Admittance  
yfs  
=10V, I =1A  
2.6  
120  
165  
230  
105  
30  
S
D
R
(on)1  
I
D
I
D
I
D
=1A, V =4V  
GS  
160  
240  
350  
mΩ  
mΩ  
mΩ  
pF  
pF  
pF  
ns  
DS  
DS  
DS  
Static Drain-to-Source On-State Resistance  
R
R
(on)2  
(on)3  
=0.5A, V =2.5V  
GS  
=0.1A, V =1.8V  
GS  
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
Turn-ON Delay Time  
Rise Time  
Ciss  
V
V
V
=10V, f=1MHz  
=10V, f=1MHz  
=10V, f=1MHz  
DS  
DS  
DS  
Coss  
Crss  
24  
t (on)  
d
See specified Test Circuit.  
See specified Test Circuit.  
See specified Test Circuit.  
See specified Test Circuit.  
7.8  
27  
t
r
ns  
Turn-OFF Delay Time  
Fall Time  
t (off)  
d
18  
ns  
t
f
22  
ns  
Marking : LH  
Continued on next page.  
Any and all SANYO products described or contained herein do not have specifications that can handle  
applications that require extremely high levels of reliability, such as life-support systems, aircraft's  
control systems, or other applications whose failure can be reasonably expected to result in serious  
physical and/or material damage. Consult with your SANYO representative nearest you before using  
any SANYO products described or contained herein in such applications.  
SANYO assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other  
parameters) listed in products specifications of any and all SANYO products described or contained  
herein.  
SANYO Electric Co.,Ltd. Sem iconductor Com pany  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
D1504PE TS IM TB-00000382 No.8162-1/4  
1234

中文翻译

下载PDF

与MCH3456相关器件

型号 品牌 获取价格 描述 数据表
MCH3456_06 SANYO

获取价格

 		N-Channel Silicon MOSFET General-Purpose Switching Device Applications
MCH3459 SANYO

获取价格

 		N-Channel Silicon MOSFET General-Purpose Switching Device Applications
MCH3460 SANYO

获取价格

 		N-Channel Silicon MOSFET General-Purpose Switching Device Applications
MCH3474 SANYO

获取价格

 		General-Purpose Switching Device Applications
MCH3474 ONSEMI

获取价格

 		Single N-Channel Power MOSFET
MCH3474_12 SANYO

获取价格

 		General-Purpose Switching Device Applications
MCH3474-TL-H ONSEMI

获取价格

 		Single N-Channel Power MOSFET
MCH3474-TL-W ONSEMI

获取价格

 		Single N-Channel Power MOSFET
MCH3475 SANYO

获取价格

 		N-Channel Silicon MOSFET General-Purpose Switching Device Applications
MCH3475_12 SANYO

获取价格

 		General-Purpose Switching Device Applications

与MCH3456相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证