生命周期: | Transferred | 包装说明: | SMALL OUTLINE, R-PDSO-F3 |
针数: | 3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.38 |
Is Samacsys: | N | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 100 V | 最大漏极电流 (Abs) (ID): | 0.8 A |
最大漏极电流 (ID): | 0.8 A | 最大漏源导通电阻: | 1.2 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PDSO-F3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 0.9 W | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | YES |
端子形式: | FLAT | 端子位置: | DUAL |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MCH3427 | ONSEMI |
获取价格 |
TRANSISTOR SMALL SIGNAL, FET, FET General Purpose Small Signal | |
MCH3427-TL-E | ONSEMI |
获取价格 |
TRANSISTOR,MOSFET,N-CHANNEL,20V V(BR)DSS,4A I(D),SOT-323VAR | |
MCH3431 | SANYO |
获取价格 |
General-Purpose Switching Device Applications | |
MCH3443 | SANYO |
获取价格 |
N CHANNEL MOS SILICON TRANSISTOR | |
MCH3444 | SANYO |
获取价格 |
Ultrahigh-Speed Switching Applications | |
MCH3445 | SANYO |
获取价格 |
Ultrahigh-Speed Switching Applications | |
MCH3456 | SANYO |
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General-Purpose Switching Device Applications | |
MCH3456_06 | SANYO |
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N-Channel Silicon MOSFET General-Purpose Switching Device Applications | |
MCH3459 | SANYO |
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N-Channel Silicon MOSFET General-Purpose Switching Device Applications | |
MCH3460 | SANYO |
获取价格 |
N-Channel Silicon MOSFET General-Purpose Switching Device Applications |