生命周期: | Active | Reach Compliance Code: | compliant |
风险等级: | 5.55 | Is Samacsys: | N |
配置: | Single | 最大漏极电流 (Abs) (ID): | 1.5 A |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 极性/信道类型: | P-CHANNEL |
最大功率耗散 (Abs): | 0.8 W | 子类别: | Other Transistors |
表面贴装: | YES | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
MCH3376 | SANYO |
功能相似 ![]() |
P-Channel Silicon MOSFET General-Purpose Switching Device Applications |
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型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MCH3376_12 | SANYO |
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General-Purpose Switching Device Applications |
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MCH3376-TL-E | ONSEMI |
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Single P-Channel Power MOSFET |
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MCH3376-TL-W | ONSEMI |
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Single P-Channel Power MOSFET |
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MCH3377 | SANYO |
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General-Purpose Switching Device Applications |
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MCH3377 | ONSEMI |
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P-Channel Power MOSFET |
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MCH3377_12 | SANYO |
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General-Purpose Switching Device Applications |
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MCH3377-TL-E | ONSEMI |
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P-Channel Power MOSFET |
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MCH3377-TL-H | ONSEMI |
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P-Channel Power MOSFET |
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MCH3377-TL-W | ONSEMI |
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P-Channel Power MOSFET |
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MCH3382 | SANYO |
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Low Votage Drive Switching Device Applications |
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