生命周期: | Active | Reach Compliance Code: | compliant |
风险等级: | 5.55 | 配置: | Single |
最大漏极电流 (Abs) (ID): | 3 A | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
极性/信道类型: | P-CHANNEL | 最大功率耗散 (Abs): | 1 W |
子类别: | Other Transistors | 表面贴装: | YES |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MCH3377_12 | SANYO |
获取价格 |
General-Purpose Switching Device Applications |
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MCH3377-TL-E | ONSEMI |
获取价格 |
P-Channel Power MOSFET |
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MCH3377-TL-H | ONSEMI |
获取价格 |
P-Channel Power MOSFET |
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MCH3377-TL-W | ONSEMI |
获取价格 |
P-Channel Power MOSFET |
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MCH3382 | SANYO |
获取价格 |
Low Votage Drive Switching Device Applications |
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MCH3382-TL-H | SANYO |
获取价格 |
Low Votage Drive Switching Device Applications |
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MCH3383 | SANYO |
获取价格 |
Low Voltage Drive Switching Device Applications |
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MCH3383 | ONSEMI |
获取价格 |
P-Channel Power MOSFET â12V, â3.5A, 69mΩ |
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MCH3383_12 | SANYO |
获取价格 |
Low Voltage Drive Switching Device Applications |
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MCH3383-TL-H | ONSEMI |
获取价格 |
P-Channel Power MOSFET â12V, â3.5A, 69mΩ |
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