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MCH3376

更新时间： 2024-01-18 12:25:21
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三洋 - SANYO 开关通用开关
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4页 277K
描述
P-Channel Silicon MOSFET General-Purpose Switching Device Applications

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中文翻译

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MCH3376 数据手册

 浏览型号MCH3376的Datasheet PDF文件第2页浏览型号MCH3376的Datasheet PDF文件第3页浏览型号MCH3376的Datasheet PDF文件第4页 
Ordering number : ENA1564  
SANYO Sem iconductors  
DATA S HEET  
P-Channel Silicon MOSFET  
General-Purpose Switching Device  
Applications  
MCH3376  
Features  
•
Low ON-resistance.  
•
1.8V drive.  
Specifications  
at Ta=25°C  
Absolute Maximum Ratings  
Parameter  
Drain-to-Source Voltage  
Gate-to-Source Voltage  
Drain Current (DC)  
Symbol  
Conditions  
Ratings  
Unit  
V
V
--20  
±10  
--1.5  
--6  
DSS  
V
V
GSS  
I
A
D
Drain Current (Pulse)  
I
PW 10 s, duty cycle 1%  
A
≤
μ
≤
DP  
Allowable Power Dissipation  
Channel Temperature  
Storage Temperature  
P
When mounted on ceramic substrate (900mm2 0.8mm)  
0.8  
W
°C  
°C  
×
D
Tch  
150  
Tstg  
--55 to +150  
at Ta=25°C  
Electrical Characteristics  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
Unit  
V
min  
--20  
max  
Drain-to-Source Breakdown Voltage  
Zero-Gate Voltage Drain Current  
Gate-to-Source Leakage Current  
Cutoff Voltage  
V
I
=--1mA, V =0V  
(BR)DSS  
D GS  
I
V
V
=--20V, V =0V  
--1  
±10  
A
A
μ
DSS  
DS  
GS  
I
=±8V, V =0V  
DS  
μ
GSS  
GS  
V
(off)  
|
V
=--10V, I =--1mA  
--0.4  
1.14  
--1.4  
V
GS  
yfs  
DS D  
Forward Transfer Admittance  
V
=--10V, I =--750mA  
D
1.9  
S
|
DS  
R
R
R
(on)1  
(on)2  
(on)3  
I
=--750mA, V =--4.5V  
GS  
185  
275  
410  
241  
385  
615  
m
Ω
Ω
Ω
DS  
DS  
DS  
D
Static Drain-to-Source On-State Resistance  
I
D
=--300mA, V =--2.5V  
GS  
m
m
I
D
=--100mA, V =--1.8V  
GS  
Marking : QH  
Continued on next page.  
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to  
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,  
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not  
be intended for use for any "special application" (medical equipment whose purpose is to sustain life,  
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal  
system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten  
human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they  
grant any guarantee thereof. If you should intend to use our products for applications outside the standard  
applications of our customer who is considering such use and/or outside the scope of our intended standard  
applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the  
intended use, our customer shall be solely responsible for the use.  
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate  
the performance, characteristics, and functions of the described products in the independent state, and are  
not guarantees of the performance, characteristics, and functions of the described products as mounted in the  
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an  
independent device, the customer should always evaluate and test devices mounted in the customer's  
products or equipment.  
www.semiconductor-sanyo.com/network  
No. A1564-1/4  
O1409PE TK IM TC-00002172  
1234

中文翻译

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MCH3376 替代型号

型号 品牌 替代类型 描述 数据表
MCH3376 ONSEMI

功能相似

 Single P-Channel Power MOSFET
MCH3376-TL-E ONSEMI

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MCH3377-TL-H ONSEMI

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