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MCH3335

更新时间： 2024-02-08 05:58:19
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
4页 38K
描述
TRANSISTOR,MOSFET,P-CHANNEL,30V V(BR)DSS,400MA I(D),SOT-323VAR

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中文翻译

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MCH3335 技术参数

生命周期：Obsolete包装说明：,
Reach Compliance Code：compliant风险等级：5.6
配置：Single最大漏极电流 (Abs) (ID)：0.4 A
FET 技术：METAL-OXIDE SEMICONDUCTOR工作模式：ENHANCEMENT MODE
最高工作温度：150 °C极性/信道类型：P-CHANNEL
最大功率耗散 (Abs)：0.6 W子类别：Other Transistors
表面贴装：YESBase Number Matches：1

MCH3335 数据手册

 浏览型号MCH3335的Datasheet PDF文件第2页浏览型号MCH3335的Datasheet PDF文件第3页浏览型号MCH3335的Datasheet PDF文件第4页 
Ordering number : ENN8228  
P-Channel Silicon MOSFET  
General-Purpose Switching Device  
Applications  
MCH3335  
Features  
•
Low ON-resistance.  
•
Ultrahigh-speed switching.  
•
2.5V drive.  
Specifications  
Absolute Maximum Ratings at Ta=25°C  
Parameter  
Drain-to-Source Voltage  
Symbol  
Conditions  
Ratings  
Unit  
V
V
--30  
-- 9  
DSS  
GSS  
Gate-to-Source Voltage (*1)  
Drain Current (DC)  
V
V
I
D
--0.4  
--1.6  
0.6  
A
Drain Current (Pulse)  
Allowable Power Dissipation  
Channel Temperature  
Storage Temperature  
I
PW≤10µs, duty cycle≤1%  
Mounted on a ceramic board (900mm2✕0.8mm)  
A
DP  
P
D
W
°C  
°C  
Tch  
150  
Tstg  
--55 to +150  
(*1) : Note, when designing a circuit using this product, that it has a gate (oxide film) protection diode connected only between its gate and source.  
Electrical Characteristics at Ta=25°C  
Ratings  
Parameter  
Symbol  
Conditions  
Unit  
min  
--30  
typ  
max  
Drain-to-Source Breakdown Voltage  
Zero-Gate Voltage Drain Current  
Gate-to-Source Leakage Current  
Cutoff Voltage  
V
I
=--1mA, V =0  
D GS  
V
µA  
µA  
V
(BR)DSS  
I
V
V
V
V
=--30V, V =0  
GS  
--1  
--1  
DSS  
DS  
GS  
DS  
DS  
I
=--8V, V =0  
DS  
GSS  
V
(off)  
GS  
=--10V, I =--100µA  
--0.4  
0.2  
--1.4  
D
Forward Transfer Admittance  
yfs  
=--10V, I =--0.2A  
0.42  
S
D
R
(on)1  
I
I
=--0.2A, V =--4.5V  
GS  
1.4  
2.0  
40  
8
1.8  
2.8  
Ω
DS  
D
D
Static Drain-to-Source On-State Resistance  
R
DS  
(on)2  
=--0.1A, V =--2.5V  
GS  
Ω
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
Turn-ON Delay Time  
Rise Time  
Ciss  
V
V
V
=--10V, f=1MHz  
DS  
=--10V, f=1MHz  
DS  
=--10V, f=1MHz  
DS  
pF  
pF  
pF  
ns  
ns  
ns  
ns  
Coss  
Crss  
4.5  
10  
5
t (on)  
See specified Test Circuit.  
See specified Test Circuit.  
See specified Test Circuit.  
See specified Test Circuit.  
d
t
r
Turn-OFF Delay Time  
Fall Time  
t (off)  
10  
5
d
t
f
Marking : YL  
Continued on next page.  
Any and all SANYO products described or contained herein do not have specifications that can handle  
applications that require extremely high levels of reliability, such as life-support systems, aircraft's  
control systems, or other applications whose failure can be reasonably expected to result in serious  
physical and/or material damage. Consult with your SANYO representative nearest you before using  
any SANYO products described or contained herein in such applications.  
SANYO assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other  
parameters) listed in products specifications of any and all SANYO products described or contained  
herein.  
SANYO Electric Co.,Ltd. Sem iconductor Com pany  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
21805PE TS IM TA-3782 No.8228-1/4  
1234

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