生命周期: | Transferred | 包装说明: | SMALL OUTLINE, R-PDSO-F3 |
针数: | 3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.38 |
Is Samacsys: | N | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 12 V | 最大漏极电流 (Abs) (ID): | 1.5 A |
最大漏极电流 (ID): | 1.5 A | 最大漏源导通电阻: | 0.27 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PDSO-F3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | P-CHANNEL |
最大功率耗散 (Abs): | 0.8 W | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | YES |
端子形式: | FLAT | 端子位置: | DUAL |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MCH3359 | SANYO |
获取价格 |
P-Channel Silicon MOSFET General-Purpose Switching Device Applications |
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MCH3360 | SANYO |
获取价格 |
P-Channel Silicon MOSFET General-Purpose Switching Device Applications |
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MCH3374 | SANYO |
获取价格 |
P-Channel Silicon MOSFET General-Purpose Switching Device Applications |
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MCH3374_12 | SANYO |
获取价格 |
General-Purpose Switching Device Applications |
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MCH3374-TL-E | ONSEMI |
获取价格 |
单 P 沟道,功率 MOSFET,-12V,-3A,70mΩ |
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MCH3374-TL-W | ONSEMI |
获取价格 |
Single P-Channel Power MOSFET -12V, -3A, 70mΩ, 3000-REEL |
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MCH3375 | SANYO |
获取价格 |
General-Purpose Switching Device Applications |
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MCH3375 | ONSEMI |
获取价格 |
Single P-Channel Power MOSFET |
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MCH3375_12 | SANYO |
获取价格 |
General-Purpose Switching Device Applications |
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MCH3375-TL-H | ONSEMI |
获取价格 |
Single P-Channel Power MOSFET |
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