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MCH3360

更新时间： 2024-01-02 09:15:44
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三洋 - SANYO 开关通用开关
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4页 38K
描述
P-Channel Silicon MOSFET General-Purpose Switching Device Applications

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MCH3360 技术参数

生命周期：Transferred包装说明：SMALL OUTLINE, R-PDSO-F3
针数：3Reach Compliance Code：unknown
ECCN代码：EAR99风险等级：5.38
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：30 V
最大漏极电流 (Abs) (ID)：1.8 A最大漏极电流 (ID)：1.8 A
最大漏源导通电阻：0.235 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：R-PDSO-F3元件数量：1
端子数量：3工作模式：ENHANCEMENT MODE
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
极性/信道类型：P-CHANNEL最大功率耗散 (Abs)：0.9 W
认证状态：Not Qualified子类别：Other Transistors
表面贴装：YES端子形式：FLAT
端子位置：DUAL晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

MCH3360 数据手册

 浏览型号MCH3360的Datasheet PDF文件第2页浏览型号MCH3360的Datasheet PDF文件第3页浏览型号MCH3360的Datasheet PDF文件第4页 
Ordering number : EN8109A  
SANYO Sem iconductors  
DATA S HEET  
P-Channel Silicon MOSFET  
General-Purpose Switching Device  
Applications  
MCH3360  
Features  
•
Low ON-resistance.  
•
Ultrahigh-speed switching.  
•
4V drive.  
Specifications  
Absolute Maximum Ratings at Ta=25°C  
Parameter  
Drain-to-Source Voltage  
Gate-to-Source Voltage  
Drain Current (DC)  
Symbol  
Conditions  
Ratings  
Unit  
V
V
-- 30  
±20  
--1.8  
--7.2  
0.9  
DSS  
GSS  
V
V
I
A
D
Drain Current (Pulse)  
Allowable Power Dissipation  
Channel Temperature  
Storage Temperature  
I
PW≤10µs, duty cycle≤1%  
Mounted on a ceramic board (900mm2✕0.8mm)  
A
DP  
P
W
°C  
°C  
D
Tch  
150  
Tstg  
--55 to +150  
Electrical Characteristics at Ta=25°C  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
Unit  
min  
-- 30  
max  
Drain-to-Source Breakdown Voltage  
Zero-Gate Voltage Drain Current  
Gate-to-Source Leakage Current  
Cutoff Voltage  
V
I
=-- 1mA, V =0V  
V
µ A  
µA  
V
(BR)DSS  
D GS  
I
V
V
V
V
=-- 30V, V =0V  
GS  
-- 1  
±10  
DSS  
GSS  
DS  
GS  
DS  
DS  
I
=±16V, V =0V  
DS  
=-- 10V, I =-- 1mA  
V (off)  
GS  
-- 1.2  
1.1  
-- 2.6  
D
Forward Transfer Admittance  
yfs  
=-- 10V, I =-- 1A  
1.8  
180  
320  
226  
43  
S
D
R
DS  
(on)1  
I
I
=-- 1A, V =-- 10V  
GS  
=-- 0.5A, V =-- 4V  
GS  
=-- 10V, f=1MHz  
=-- 10V, f=1MHz  
=-- 10V, f=1MHz  
235  
450  
mΩ  
mΩ  
pF  
pF  
pF  
ns  
ns  
ns  
ns  
D
Static Drain-to-Source On-State Resistance  
R
DS  
(on)2  
D
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
Turn-ON Delay Time  
Rise Time  
Ciss  
V
V
V
DS  
DS  
DS  
Coss  
Crss  
36  
t (on)  
d
See specified Test Circuit.  
See specified Test Circuit.  
See specified Test Circuit.  
See specified Test Circuit.  
8.5  
10.5  
29  
t
r
Turn-OFF Delay Time  
Fall Time  
t (off)  
d
t
f
22  
Marking : WM  
Continued on next page.  
Any and all SANYO Semiconductor products described or contained herein do not have specifications  
that can handle applications that require extremely high levels of reliability, such as life-support systems,  
aircraft's control systems, or other applications whose failure can be reasonably expected to result in  
serious physical and/or material damage. Consult with your SANYO Semiconductor representative  
nearest you before usingany SANYO Semiconductor products described or contained herein in such  
applications.  
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products  
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition  
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor  
products described or contained herein.  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
91306PE MS IM TC-00000176 / N2504 TS IM TB-00000651 No.8109-1/4  
1234

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