Datasheet > MCH3333

MCH3333

更新时间： 2024-01-17 12:47:30

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
4页	94K
描述
TRANSISTOR SMALL SIGNAL, FET, FET General Purpose Small Signal

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技术参数
数据手册

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MCH3333 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.84
Base Number Matches：	1

MCH3333 数据手册

Ordering number : ENN7989

MCH3333

P-Channel Silicon MOSFET

General-Purpose Switching Device

Applications

MCH3333

Features

•

Low ON-resistance.

•

Ultrahigh-speed switching.

•

2.5V drive.

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter

Drain-to-Source Voltage

Gate-to-Source Voltage

Drain Current (DC)

Symbol

Conditions

Ratings

Unit

-- 30

±10

--1.5

--6.0

0.9

DSS

GSS

Drain Current (Pulse)

Allowable Power Dissipation

Channel Temperature

Storage Temperature

PW≤10µs, duty cycle≤1%

Mounted on a ceramic board (900mm²✕0.8mm)

°C

Tch

150

Tstg

--55 to +150

Electrical Characteristics at Ta=25°C

Ratings

typ

Parameter

Symbol

Conditions

Unit

min

-- 30

max

Drain-to-Source Breakdown Voltage

Zero-Gate Voltage Drain Current

Gate-to-Source Leakage Current

Cutoff Voltage

=-- 1mA, V =0

D GS

µA

(BR)DSS

=-- 30V, V =0

-- 1

±10

-- 1.4

DSS

GSS

=±8V, V =0

=-- 10V, I =-- 1mA

(off)

-- 0.4

1.38

Forward Transfer Admittance

yfs



=-- 10V, I =-- 0.8A

2.3

215

290

285



(on)1

=-- 0.8A, V =-- 4V

=-- 0.4A, V =-- 2.5V

=-- 10V, f=1MHz

280

410

mΩ

Static Drain-to-Source On-State Resistance

(on)2

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn-ON Delay Time

Rise Time

Ciss

Coss

Crss

t (on)

See specified Test Circuit.

Turn-OFF Delay Time

Fall Time

t (off)

Marking : YJ

Continued on next page.

Jan-2011, Rev. 0

Publication Order Number:

www.onsemi.com

Rev.0 I Page 1 of 4 I www.onsemi.com

MCH3333/D

12 3 4

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