Datasheet > MCH3333A

MCH3333A

更新时间： 2024-02-14 02:06:50

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
5页	491K
描述
Single P-Channel Power MOSFET

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MCH3333A 数据手册

MCH3333A

Power MOSFET

–30V, 215mΩ, –2.0A, Single P-Channel

This Power MOSFET is produced using ON Semiconductor’s trench

technology, which is specifically designed to minimize gate charge and low

on resistance. This device is suitable for applications with low gate charge

driving or low on resistance requirements.

www.onsemi.com

Features

• Low On-Resistance

• 1.8V drive

• ESD Diode-Protected Gate

• Pb-Free, Halogen Free and RoHS compliance

(on) Max

D Max

DSS

215mΩ@ −4V

280mΩ@ −2.5V

430mΩ@ −1.8V

−30V

−2A

Typical Applications

• Load Switch

ELECTRICAL CONNECTION

P-Channel

SPECIFICATIONS

ABSOLUTE MAXIMUM RATING at Ta = 25°C (Note 1)

Parameter

Drain to Source Voltage

Gate to Source Voltage

Drain Current (DC)

Symbol

Value

Unit

−30

DSS

GSS

1 : Gate

2 : Source

3 : Drain

−2.0

Drain Current (Pulse)

−8.0

PW ≤ 10μs, duty cycle ≤ 1%

Power Dissipation

When mounted on ceramic substrate

(1000mm²

× 0.8mm)

0.9

PACKING TYPE : TL

MARKING

Junction Temperature

150

°C

Storage Temperature

Tstg

−55 to +150

Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage

the device. If any of these limits are exceeded, device functionality should not

be assumed, damage may occur and reliability may be affected.

THERMAL RESISTANCE RATINGS

ORDERING INFORMATION

See detailed ordering and shipping

information on page 5 of this data sheet.

Parameter

Junction to Ambient

When mounted on ceramic substrate

(1000mm²

0.8mm)

Symbol

Value

138.8

Unit

θJA

°C/W

June 2015 - Rev. 1

Publication Order Number :

MCH3333A/D

12 3 4 5

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