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MCH3333A-TL-H PDF预览

MCH3333A-TL-H

更新时间: 2024-01-02 10:46:31
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
5页 491K
描述
Single P-Channel Power MOSFET

MCH3333A-TL-H 技术参数

是否无铅: 不含铅生命周期:Lifetime Buy
包装说明:,Reach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:5.32
JESD-609代码:e6湿度敏感等级:1
峰值回流温度(摄氏度):NOT SPECIFIED端子面层:Tin/Bismuth (Sn/Bi)
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

MCH3333A-TL-H 数据手册

 浏览型号MCH3333A-TL-H的Datasheet PDF文件第2页浏览型号MCH3333A-TL-H的Datasheet PDF文件第3页浏览型号MCH3333A-TL-H的Datasheet PDF文件第4页浏览型号MCH3333A-TL-H的Datasheet PDF文件第5页 
MCH3333A  
Power MOSFET  
–30V, 215m, –2.0A, Single P-Channel  
This Power MOSFET is produced using ON Semiconductor’s trench  
technology, which is specifically designed to minimize gate charge and low  
on resistance. This device is suitable for applications with low gate charge  
driving or low on resistance requirements.  
www.onsemi.com  
Features  
Low On-Resistance  
1.8V drive  
ESD Diode-Protected Gate  
Pb-Free, Halogen Free and RoHS compliance  
V
R
(on) Max  
I
D Max  
DSS  
DS  
215m@ 4V  
280m@ 2.5V  
430m@ 1.8V  
30V  
2A  
Typical Applications  
Load Switch  
ELECTRICAL CONNECTION  
P-Channel  
SPECIFICATIONS  
3
ABSOLUTE MAXIMUM RATING at Ta = 25°C (Note 1)  
Parameter  
Drain to Source Voltage  
Gate to Source Voltage  
Drain Current (DC)  
Symbol  
Value  
Unit  
V
V
V
30  
10  
DSS  
GSS  
V
1
1 : Gate  
2 : Source  
3 : Drain  
I
2.0  
A
D
Drain Current (Pulse)  
I
8.0  
A
DP  
PW 10μs, duty cycle 1%  
2
Power Dissipation  
When mounted on ceramic substrate  
(1000mm2  
× 0.8mm)  
P
0.9  
W
D
PACKING TYPE : TL  
MARKING  
Junction Temperature  
Tj  
150  
°C  
°C  
Storage Temperature  
Tstg  
55 to +150  
QU  
Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage  
the device. If any of these limits are exceeded, device functionality should not  
be assumed, damage may occur and reliability may be affected.  
TL  
THERMAL RESISTANCE RATINGS  
ORDERING INFORMATION  
See detailed ordering and shipping  
information on page 5 of this data sheet.  
Parameter  
Junction to Ambient  
When mounted on ceramic substrate  
(1000mm2  
0.8mm)  
Symbol  
Value  
138.8  
Unit  
R
θJA  
°C/W  
×
© Semiconductor Components Industries, LLC, 2015  
June 2015 - Rev. 1  
1
Publication Order Number :  
MCH3333A/D  

MCH3333A-TL-H 替代型号

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