Datasheet > MCH3312

MCH3312

更新时间： 2024-10-01 19:56:07

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
4页	94K
描述
TRANSISTOR SMALL SIGNAL, FET, FET General Purpose Small Signal

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中文翻译

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技术参数
数据手册

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MCH3312 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.38
Is Samacsys：	N	Base Number Matches：	1

MCH3312 数据手册

Ordering number : ENN7009

MCH3312

P-Channel Silicon MOSFET

MCH3312

Ultrahigh-Speed Switching Applications

Features

Package Dimensions

unit : mm

•

Low ON-resistance.

• Ultrahigh-speed switching.

• 4V drive.

2167A

[MCH3312]

0.3

0.15

0.65

2.0

1 : Gate

2 : Source

3 : Drain

SANYO : MCPH3

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter

Drain-to-Source Voltage

Symbol

Conditions

Ratings

Unit

--30

DSS

GSS

Gate-to-Source Voltage

Drain Current (DC)

±20

-- 2

Drain Current (Pulse)

Allowable Power Dissipation

Channel Temperature

Storage Temperature

PW≤10µs, duty cycle≤1%

--8

Mounted on a ceramic board (900mm²✕0.8mm)

150

°C

Tch

Tstg

--55 to +150

Electrical Characteristics at Ta=25°C

Ratings

typ

Parameter

Symbol

Conditions

Unit

min

max

Drain-to-Source Breakdown Voltage

Zero-Gate Voltage Drain Current

Gate-to-Source Leakage Current

Cutoff Voltage

=--1mA, V =0

D GS

--30

µA

(BR)DSS

=--30V, V =0

--1

DSS

=±16V, V =0

±10

GSS

(off)

=--10V, I =--1mA

--1.2

1.4

--2.6

Forward Transfer Admittance

yfs



=--10V, I =--1A

2.0

110

205



(on)1

=--1A, V =--10V

145

290

mΩ

Static Drain-to-Source On-State Resistance

(on)2

=--0.5A, V =--4V

Marking : JM

Continued on next page.

Jan-2011, Rev. 0

Publication Order Number:

www.onsemi.com

Rev.0 I Page 1 of 4 I www.onsemi.com

MCH3312/D

12 3 4

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