生命周期: | Transferred | 包装说明: | SMALL OUTLINE, R-PDSO-F3 |
针数: | 3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.38 |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 20 V |
最大漏极电流 (Abs) (ID): | 1 A | 最大漏极电流 (ID): | 1 A |
最大漏源导通电阻: | 0.5 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PDSO-F3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | P-CHANNEL | 最大功率耗散 (Abs): | 0.8 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | YES | 端子形式: | FLAT |
端子位置: | DUAL | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MCH3308 | SANYO |
获取价格 |
Ultrahigh-Speed Switching Applications | |
MCH3309 | SANYO |
获取价格 |
Ultrahigh-Speed Switching Applications | |
MCH3310 | SANYO |
获取价格 |
Ultrahigh-Speed Switching Applications | |
MCH3312 | SANYO |
获取价格 |
Ultrahigh-Speed Switching Applications | |
MCH3312 | ONSEMI |
获取价格 |
TRANSISTOR SMALL SIGNAL, FET, FET General Purpose Small Signal | |
MCH3312-TL-E | ONSEMI |
获取价格 |
TRANSISTOR,MOSFET,P-CHANNEL,30V V(BR)DSS,2A I(D),SC-70VAR | |
MCH3314 | SANYO |
获取价格 |
MCH3314 | |
MCH3315 | SANYO |
获取价格 |
P-Channel Silicon MOSFET General-Purpose Switching Device Applications | |
MCH3315 | ONSEMI |
获取价格 |
TRANSISTOR SMALL SIGNAL, FET, FET General Purpose Small Signal | |
MCH3315-TL-E | ONSEMI |
获取价格 |
TRANSISTOR,MOSFET,P-CHANNEL,60V V(BR)DSS,1A I(D),SOT-323VAR |