Datasheet > MC-458CA726

MC-458CA726

更新时间： 2024-11-26 11:11:15

品牌	Logo	应用领域
尔必达 - ELPIDA		/
页数	文件大小	规格书
16页	152K
描述
8M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MC-458CA726 数据手册

DATA SHEET

MOS INTEGRATED CIRCUIT

MC-458CA726

8M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE

UNBUFFERED TYPE

Description

The MC-458CA726EFB and MC-458CA726PFB are 8,388,608 words by 72 bits synchronous dynamic RAM module

on which 5 pieces of 128M SDRAM : µPD45128163 are assembled.

This module provides high density and large quantities of memory in a small space without utilizing the surface-

mounting technology on the printed circuit board.

Decoupling capacitors are mounted on power supply line for noise reduction.

Features

• 8,388,608 words by 72 bits organization (ECC Type)

• Clock frequency and access time from CLK

Part number

/CAS latency

Clock frequency

(MAX.)

Access time from CLK

(MAX.)

MC-458CA726EFB-A80

MC-458CA726EFB-A10

MC-458CA726PFB-A80

MC-458CA726PFB-A10

CL = 3

CL = 2

CL = 3

CL = 2

CL = 3

CL = 2

CL = 3

CL = 2

125 MHz

100 MHz

77 MHz

6 ns

7 ns

6 ns

7 ns

125 MHz

100 MHz

77 MHz

• Fully Synchronous Dynamic RAM, with all signals referenced to a positive clock edge

• Pulsed interface

• Possible to assert random column address in every cycle

• Quad internal banks controlled by BA0 and BA1 (Bank Select)

• Programmable burst-length (1, 2, 4, 8 and full page)

• Programmable wrap sequence (sequential / interleave)

• Programmable /CAS latency (2, 3)

• Automatic precharge and controlled precharge

• CBR (Auto) refresh and self refresh

• All DQs have 10 Ω ± 10 % of series resistor

• Single 3.3 V ± 0.3 V power supply

• LVTTL compatible

• 4,096 refresh cycles /64 ms

• Burst termination by Burst Stop command and Precharge command

• 168-pin dual in-line memory module (Pin pitch = 1.27 mm)

• Unbuffered type

• Serial PD

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local Elpida Memory, Inc. for

availability and additional information.

Document No. E0061N10 (1st edition)

This product became EOL in September, 2002.

(Previous No. M13050EJ7V0DS00)

Date Published January 2001 CP (K)

Printed in Japan

Elpida Memory, Inc. is a joint venture DRAM company of NEC Corporation and Hitachi, Ltd.

12 3 4 5 6 7...16

中文翻译

下载PDF

与MC-458CA726相关器件

型号	品牌	获取价格	描述	数据表
MC-458CA726EFB-A10	NEC	获取价格	8M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
MC-458CA726EFB-A10	ELPIDA	获取价格	8M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
MC-458CA726EFB-A80	ELPIDA	获取价格	8M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
MC-458CA726EFB-A80	NEC	获取价格	8M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
MC-458CA726F-A80	NEC	获取价格	Synchronous DRAM Module, 8MX72, 6ns, CMOS, DIMM-168
MC-458CA726LFA-A10	NEC	获取价格	Synchronous DRAM Module, 8MX72, 6ns, MOS, DIMM-168
MC-458CA726PFB-A10	NEC	获取价格	8M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
MC-458CA726PFB-A10	ELPIDA	获取价格	8M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
MC-458CA726PFB-A80	NEC	获取价格	8M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
MC-458CA726PFB-A80	ELPIDA	获取价格	8M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE

与MC-458CA726相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

43
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

33
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

61
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

58

产品中心

服务支持

精选活动

关于我们

帮助中心

MC-458CA726

MC-458CA726 数据手册

与MC-458CA726相关器件

与MC-458CA726相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

MC-458CA726

MC-458CA726 数据手册

与MC-458CA726相关器件

与MC-458CA726相关文章

您还可以找

您在本页遇到什么问题？