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MC-458CA726EFB-A80 PDF预览

MC-458CA726EFB-A80

更新时间： 2024-11-26 11:11:15
品牌 Logo 应用领域
尔必达 - ELPIDA /
页数 文件大小 规格书
16页 152K
描述
8M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE

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MC-458CA726EFB-A80 数据手册

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DATA SHEET  
MOS INTEGRATED CIRCUIT  
MC-458CA726  
8M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE  
UNBUFFERED TYPE  
Description  
The MC-458CA726EFB and MC-458CA726PFB are 8,388,608 words by 72 bits synchronous dynamic RAM module  
on which 5 pieces of 128M SDRAM : µPD45128163 are assembled.  
This module provides high density and large quantities of memory in a small space without utilizing the surface-  
mounting technology on the printed circuit board.  
Decoupling capacitors are mounted on power supply line for noise reduction.  
Features  
• 8,388,608 words by 72 bits organization (ECC Type)  
• Clock frequency and access time from CLK  
Part number  
/CAS latency  
Clock frequency  
(MAX.)  
Access time from CLK  
(MAX.)  
MC-458CA726EFB-A80  
MC-458CA726EFB-A10  
MC-458CA726PFB-A80  
MC-458CA726PFB-A10  
CL = 3  
CL = 2  
CL = 3  
CL = 2  
CL = 3  
CL = 2  
CL = 3  
CL = 2  
125 MHz  
100 MHz  
100 MHz  
77 MHz  
6 ns  
6 ns  
6 ns  
7 ns  
6 ns  
6 ns  
6 ns  
7 ns  
125 MHz  
100 MHz  
100 MHz  
77 MHz  
• Fully Synchronous Dynamic RAM, with all signals referenced to a positive clock edge  
• Pulsed interface  
• Possible to assert random column address in every cycle  
• Quad internal banks controlled by BA0 and BA1 (Bank Select)  
• Programmable burst-length (1, 2, 4, 8 and full page)  
• Programmable wrap sequence (sequential / interleave)  
• Programmable /CAS latency (2, 3)  
• Automatic precharge and controlled precharge  
• CBR (Auto) refresh and self refresh  
• All DQs have 10 Ω ± 10 % of series resistor  
• Single 3.3 V ± 0.3 V power supply  
• LVTTL compatible  
• 4,096 refresh cycles /64 ms  
• Burst termination by Burst Stop command and Precharge command  
• 168-pin dual in-line memory module (Pin pitch = 1.27 mm)  
• Unbuffered type  
• Serial PD  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local Elpida Memory, Inc. for  
availability and additional information.  
Document No. E0061N10 (1st edition)  
This product became EOL in September, 2002.  
(Previous No. M13050EJ7V0DS00)  
Date Published January 2001 CP (K)  
Printed in Japan  
Elpida Memory, Inc. is a joint venture DRAM company of NEC Corporation and Hitachi, Ltd.  
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MC-458CA726PFB-A80 NEC

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 		8M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
MC-458CA727EFA-A75 NEC

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