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MBT2222ADW1T1G PDF预览

MBT2222ADW1T1G

更新时间: 2024-09-26 11:11:19
品牌 Logo 应用领域
安森美 - ONSEMI 晶体小信号双极晶体管开关光电二极管PC
页数 文件大小 规格书
6页 161K
描述
General Purpose Transistor

MBT2222ADW1T1G 技术参数

是否无铅:不含铅生命周期:Active
零件包装代码:SC-88包装说明:SMALL OUTLINE, R-PDSO-G6
针数:6Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:1 week
风险等级:0.98Samacsys Confidence:3
Samacsys Status:ReleasedSamacsys PartID:225034
Samacsys Pin Count:6Samacsys Part Category:Integrated Circuit
Samacsys Package Category:SOT23 (6-Pin)Samacsys Footprint Name:SC-88(SOT-363) CASE 419B-02 ISSUE Y
Samacsys Released Date:2015-08-06 09:20:36Is Samacsys:N
最大集电极电流 (IC):0.6 A集电极-发射极最大电压:40 V
配置:SEPARATE, 2 ELEMENTS最小直流电流增益 (hFE):75
JESD-30 代码:R-PDSO-G6JESD-609代码:e3
湿度敏感等级:1元件数量:2
端子数量:6最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:NPN最大功率耗散 (Abs):0.15 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):300 MHz
最大关闭时间(toff):285 ns最大开启时间(吨):35 ns
Base Number Matches:1

MBT2222ADW1T1G 数据手册

 浏览型号MBT2222ADW1T1G的Datasheet PDF文件第2页浏览型号MBT2222ADW1T1G的Datasheet PDF文件第3页浏览型号MBT2222ADW1T1G的Datasheet PDF文件第4页浏览型号MBT2222ADW1T1G的Datasheet PDF文件第5页浏览型号MBT2222ADW1T1G的Datasheet PDF文件第6页 
MBT2222ADW1T1G  
General Purpose Transistor  
NPN Silicon  
Features  
Moisture Sensitivity Level: 1  
http://onsemi.com  
These Devices are PbFree, Halogen Free/BFR Free and are RoHS  
Compliant  
(3)  
(2)  
(1)  
Q
MAXIMUM RATINGS  
Q
Rating  
CollectorEmitter Voltage  
CollectorBase Voltage  
EmitterBase Voltage  
Symbol  
Value  
40  
Unit  
Vdc  
1
2
V
CEO  
V
CBO  
75  
Vdc  
(4)  
(5)  
(6)  
V
EBO  
6.0  
Vdc  
Collector Current Continuous  
Electrostatic Discharge  
I
600  
mAdc  
C
ESD  
HBM Class 2  
MM Class B  
THERMAL CHARACTERISTICS  
Characteristic  
1
Symbol  
Max  
Unit  
Total Package Dissipation (Note 1),  
T = 25°C  
A
P
150  
mW  
°C/W  
°C  
D
SC88/SC706/SOT363  
CASE 419B  
Thermal Resistance,  
JunctiontoAmbient  
R
q
833  
JA  
STYLE 1  
Junction and Storage Temperature  
T , T  
J
55 to +150  
stg  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
RecommendedOperating Conditions may affect device reliability.  
1. Device mounted on FR4 glass epoxy printed circuit board using the minimum  
recommended footprint.  
MARKING DIAGRAM  
6
1P M G  
G
1
1P  
M
G
= Specific Device Code  
= Date Code  
= PbFree Package  
(Note: Microdot may be in either location)  
ORDERING INFORMATION  
Device  
Package  
Shipping  
MBT2222ADW1T1G SOT363  
(PbFree)  
3000 /  
Tape & Reel  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
©
Semiconductor Components Industries, LLC, 2009  
1
Publication Order Number:  
October, 2009 Rev. 4  
MBT2222ADW1T1/D  
 

MBT2222ADW1T1G 替代型号

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MBT3904DW1T3 ONSEMI

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MBT2222ADW1T1 ONSEMI

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General Purpose Transistor

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