Datasheet > MBQ40T120FES

MBQ40T120FES

更新时间： 2024-11-09 01:22:59

品牌	Logo	应用领域
美格纳 - MGCHIP		双极性晶体管
页数	文件大小	规格书
8页	1316K
描述
High speed FieldStop Trench IGBT

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中文翻译

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数据手册

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MBQ40T120FES 数据手册

MBQ40T120FES

High speed FieldStop Trench IGBT

Features

General Description

 High Speed Switching & Low Power Loss

 V_CE(sat)= 2.0V @ I_C= 40A

 High Input Impedance

This IGBT is produced using advanced MagnaChip’s Field

Stop Trench IGBT Technology, which provides low V_CE(SAT)

high switching performance and excellent quality.

 t_rr= 100ns (typ.)

This device is for PFC, UPS & Inverter applications.

 Ultra Soft, fast recovery anti-parallel diode

 Ultra narrowed VF distribution control

 Positive Temperature coefficient for easy paralleling

Applications

 PFC

 UPS

 Inverter

TO-247

Absolute Maximum Ratings

Characteristics

Collector-emitter voltage

Symbol

V_CES

Rating

1200

±20

Unit

Gate-emitter voltage

V_GES

T_C=25°C

Collector current

I_C

T_C=100°C

Pulsed collector current, pulse time limited by T_jmax

Diode forward current @ T_C= 100°C

I_CM

I_F

160

Diode pulsed current, Pulse time limited by T_jmax

I_FM

160

357

142

T_C=25°C

Power dissipation

P_D

T_C=100°C

Short circuit withstand time

V_CE= 600V, V_GE= 15V, T_C= 150°C

Allowed number of short circuit < 1000

Time between short circuits ≥ 1.0s

tsc

μs

Operating Junction and storage temperature range

T_J, T_stg

-55~150

°C

Thermal Characteristics

Characteristics

Thermal resistance junction-to-ambient

Symbol

R_θJA

Rating

Unit

Thermal resistance junction-to-case for IGBT

Thermal resistance junction-to-case for Diode

R_θJC

0.35

0.8

°C/W

R_θJC

Jun. 2015 Revision 0.0

MagnaChip Semiconductor Ltd.

12 3 4 5 6 7 8

中文翻译

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