Datasheet > MBQ40T65QESTH

MBQ40T65QESTH

更新时间： 2024-11-21 17:15:51

品牌	Logo	应用领域
美格纳 - MGCHIP		/
页数	文件大小	规格书
8页	711K
描述
TO-247

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中文翻译

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数据手册

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MBQ40T65QESTH 数据手册

MBQ40T65QES

650V Field Stop IGBT

Features

General Description

 High Speed Switching & Low Power Loss

 V_CE(sat)= 1.8V @ I_C= 40A

 Maximum junction temperature 175°C

This IGBT is produced using advanced Magnachip’s Field

Stop Trench IGBT Technology, which provides high switching

speed and excellent quality.

Applications

 Inverters

 Welding converters

 High range switching frequency converters

TO-247

Maximum Rating

Parameter

Symbol

Rating

650

Unit

Collector-emitter voltage

V_CE

T_C=25°C

DC collector current, limited by T_vjmax

T_C=100°C

I_C

I_Cpuls

I_F

Pulsed collector current, t_plimited by T_vjmax

120

T_C=25°C

Diode forward current limited by T_vjmax

T_C=100°C

Diode pulsed current, t_plimited by T_vjmax

Gate-emitter voltage

I_Fpuls

V_GE

120

±20

T_C=25°C

230

°C

Power dissipation

T_C=100°C

P_D

115

Operating Junction temperature range

Storage temperature range

T_vj

-40~175

-55~150

T_stg

Thermal Characteristic

Parameter

Thermal resistance junction-to-ambient

Thermal resistance junction-to-case for IGBT

Thermal resistance junction-to-case for Diode

Symbol

R_θJA

Rating

Unit

R_θJC

0.65

1.75

°C/W

R_θJC

Jul. 2021. Version 1.2

Magnachip Semiconductor Ltd.

12 3 4 5 6 7 8

中文翻译

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